Related papers: Impact ionization in InSb probed by THz-pump THz-p…
MnBi$_{2}$Te$_{4}$, the first topological insulator with inherent magnetic ordering, has attracted significant attention recently for providing a platform to realize several exotic quantum phenomena at relatively higher temperatures. In…
The optical, elastic anisotropic and thermodynamic properties of TiN in the NaCl (B1) structure are analyzed in detail in the temperature range from 0 to 2000 K and the pressure range from 0 to 20 GPa. From the calculated dielectric…
Topological crystalline insulators -- topological insulators whose properties are guaranteed by crystalline symmetry -- can potentially provide a promising platform for terahertz optoelectronic devices, as their properties can be tuned on…
Photoluminescence measurements on high-quality InGaN quantum wells reveal that carriers diffuse laterally to long distances at room temperature, up to tens of microns. This behavior, which shows a pronounced dependence on the excitation…
We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density and mobility of p-type CVD graphene samples. Time-resolved terahertz…
We investigate the carrier-envelope phase and intensity dependence of the longitudinal momentum distribution of photoelectrons resulting from above-threshold ionization of argon by few-cycle laser pulses. The intensity of the pulses with a…
The heating of carriers in an intrinsic graphene under an abrupt switching off a dc electric field is examined taking into account both the energy relaxation via acoustic and optic phonons and the interband generation-recombination…
We simulate the terahertz emission from laterally-biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material. Incident pump-pulse parameters of current Ti:Sapphire and Er:fibre…
Direct measurements of photoexcited carrier dynamics in nickel are made using few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy at the nickel M$_{2,3}$ edge. It is observed that the core-level absorption lineshape…
This study presents a comprehensive Multiphysics model for zinc-ion batteries (ZIBs), incorporating electrochemical aspects. The model integrates the mass transport of Zn2+ ions, charge transfer, and solid diffusion to predict performance…
High-temperature superconductivity in cuprates emerges upon doping the parent Mott insulator. Robust signatures of the low-doped electronic state include a Hall carrier density that initially tracks the number of doped holes and the…
Indium antimonide (InSb) is a fundamental material for infrared radiation detectors based on interband transitions. Its narrow bandgap enables detection of infrared radiation within the $3-5 \mu m$ atmospheric window, while its high quantum…
High-speed back-illuminated uni-traveling-carrier photodiodes at 1064nm were demonstrated grown on InP with 3dB bandwidth of 17.8 GHz at -5 V bias, using InGaAsP as absorption layer. PDs with 40um diameter deliver RF output power levels as…
We report on THz, infrared reflectivity and transmission experiments for wave numbers from 10 to 8000 cm$^{-1}$ ($\sim$ 1 meV - 1 eV) and for temperatures from 5 to 295 K on the Kitaev candidate material {\alpha}-RuCl$_3$. As reported…
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated…
The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and…
A p-n junction maintained at above ambient temperature can work as a heat engine, converting some of the supplied heat into electricity and rejecting entropy by interband emission. Such thermoradiative cells have potential to harvest…
Room temperature, wavelength non-degenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well structure. Carrier relaxation dynamics were investigated as a function of excitation…
The relaxation dynamics of photoexcited quasiparticles of three-dimensional (3D) Dirac semimetals are vital towards their application in high performance electronic and optoelectronic devices. In this work, the relaxation dynamics of…
Ultrafast optical pump-probe spectroscopy is used to track carrier dynamics in the large magnetoresistance material WTe$_{2}$. Our experiments reveal a fast relaxation process occurring on a sub-picosecond time scale that is caused by…