Related papers: Germanium Segregation in CVD Grown Sige Layers for…
We analyze Ge-related defects in Ge-doped SiO_2 using first-principles density functional techniques. Ge is incorporated at the level of ~ 1 mol % and above. The growth conditions of Ge:SiO_2 naturally set up oxygen deficiency, with vacancy…
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading…
Core-shell nanowires made of Si and Ge can be grown experimentally with excellent control for different sizes of both core and shell. We have studied the structural properties of Si/Ge and Ge/Si core-shell nanowires aligned along the…
Germanium is an extremely important material used for numerous functional applications in many fields of nanotechnology. In this paper, we study the crystallization of amorphous Ge using atomistic simulations of critical nano-metric nuclei…
Research of the nonlinear optical characteristics of transition metal dichalcogenides in the presence of photoactive particles, plasmonic nanocavities, waveguides, and metamaterials is still in its early stages. This investigation delves…
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…
To examine the process of native corrosion of ultrathin (about 10 nm) copper films deposited on quartz glass substrates $(SiO_2)$ with and without a germanium sublayer, the time dependences of the microwave reflection coefficient $R$ and…
Glasses are nonequilibrium solids with properties highly dependent on their method of preparation. In vapor-deposited molecular glasses, structural organization could be readily tuned with deposition rate and substrate temperature. Herein,…
The alterations in the magnetic properties and electronic structure of chemical vapor deposition (CVD) grown nano-dimensional molybdenum disulfide (MoS2) after low energy ion irradiation are thoroughly investigated. The formation of pure…
Germanium Selenide (GeSe) is a van der Waals-bonded layered material with promising optoelectronic properties, which has been experimentally synthesized for 2D semiconductor applications. In the monolayer, due to reduced dimensionality and,…
Nanocrystalline Si and Ge are of high interest for integrated Si photonics related to light emission, optical sensors, photodetectors, solar energy harvesting and conversion devices, and also for floating gate non-volatile memories (NVMs).…
This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The…
We report here on results of experimental-theoretical investigation of high-order harmonic generation (HHG) in layers of CdSe semiconductor quantum dots of different sizes and a reference bulk CdSe thin film. We observe a strong decrease in…
By using solid-state reactions, we successfully synthesize new oxyselenides CsV$_2$Se$_{2-x}$O (x = 0, 0.5). These compounds containing V$_2$O planar layers with a square lattice crystallize in the CeCr$_2$Si$_2$C structure with the space…
In this work, we characterized gadolinium oxide films deposited on silicon by high pressure sputtering with a two-step process: first, we sputtered metallic gadolinium in an argon atmosphere and then, we performed an in-situ plasma…
Cerium dioxide (CeO2) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation…
Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in…
Oxidization of a dilute Si(Ge) alloy is modeled using an original protocol based on molecular dynamics simulation and rules for the oxygen insertions. These rules, deduced from ab-initio calculations, favor the formation of SiO_2 against…
Rutile germanium dioxide (r-GeO$_2$) is a promising ultra-wide bandgap (UWBG) semiconductor, offering a high theoretical Baliga figure of merit, potential for p-type doping, and favorable thermal and electrical properties. In this work, we…
A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high…