Related papers: Flicker Noise in Bilayer Graphene Transistors

The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. This bound is calculated explicitly in the case of monolayer…

This article analyzes the design of a low-noise amplifier intended as the input front-end for the measurement of the low-frequency components (below 10 Hz) of a 50 Ohm source. Low residual flicker is the main desired performance. This…

We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and…

We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain…

The electric noise can be an important limitation for applications of conducting elements of size in the nanometer range. The intrinsic electrical noise of prospective materials for opto-spintronics applications like ZnO has not been…

We demonstrate dispersive readout of individual charge states in a gate-defined few-electron quantum dot in bilayer graphene. We employ a radio frequency reflectometry circuit, where an LC resonator with a resonance frequency close to 280…

Variability of low frequency noise (LFN) in MOSFETs is bias-dependent. Moderate- to large-sized transistors commonly used in analog/RF applications show 1/f-like noise spectra, resulting from the superposition of random telegraph noise…

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in…

Bilayer graphene twisted by a small angle shows a significant charge modulation away from neutrality, as the charge in the narrow bands near the Dirac point is mostly localized in the regions of the Moir\'e pattern with $AA$ stacking. The…

We study the problem of impurities and mid-gap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field…

Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space…

We investigate the second spectrum of charge carrier density fluctuations in graphene within the McWorther model, where noise is induced by electron traps in the substrate. Within this simple picture, we obtain a closed-form expression…

A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a…

We consider a graphene sheet in the vicinity of a substrate, which contains charged impurities. An analytic expression for the probability distribution function of voltage fluctuations due to the charged impurities is derived. The…

In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is…

The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. This bound is calculated explicitly in the case of semiconductors…

Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to…

The microwave signal at the output of a photodiode that detects a modulated optical beam contains the phase noise phi(t) and the amplitude noise alpha(t) of the detector. Beside the white noise, which is well understood, the spectral…

Using terahertz time-domain spectroscopy, the real part of optical conductivity [$\sigma_{1}(\omega)$] of twisted bilayer graphene was obtained at different temperatures (10 -- 300 K) in the frequency range 0.3 -- 3 THz. On top of a…

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for…