Related papers: Critical behavior at Mott-Anderson transition: a T…
Anderson localization is a universal quantum feature caused by destructive interference. On the other hand chiral symmetry is a key ingredient in different problems of theoretical physics: from nonperturbative QCD to highly doped…
Dilute magnetic impurities in a disordered Fermi liquid are considered close to the Anderson metal-insulator transition (AMIT). Critical Power law correlations between electron wave functions at different energies in the vicinity of the…
We thoroughly analyze the divergences of the irreducible vertex functions occurring in the charge channel of the half-filled Hubbard model in close proximity to the Mott metal-insulator transition (MIT). In particular, by systematically…
We propose a new viewpoint on the study of localization transitions in disordered quantum systems, showing how critical properties can be seen also as a geometric transition in the data space generated by the classically encoded…
The effect of disorder on the electronic properties near the Mott transition is studied in an organic superconductor $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br, which is systematically irradiated by X-ray. We observe that X-ray irradiation…
We study the critical behavior of the Anderson localization-delocalization transition in corner-sharing tetrahedral lattices. We compare our results obtained by three different numerical methods namely the multifractal analysis, the Green…
The Mott-Hubbard metal-insulator transition is studied within a simplified version of the Dynamical Mean-Field Theory (DMFT) in which the coupling between the impurity level and the conduction band is approximated by a single pole at the…
We develop a nanoscale dynamical mean-field theory (nano-DMFT) to deal with strong Coulomb interaction effects in physical systems that are intermediate in size between atoms and bulk materials, taking into account the tunneling into nearby…
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…
We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator…
The emergence of glassy behavior of electrons is investigated for systems close to the disorder and/or interaction-driven metal-insulator transitions. Our results indicate that Anderson localization effects strongly stabilize such glassy…
Phase transitions are prevalent throughout physics, spanning thermal phenomena like water boiling to magnetic transitions in solids. They encompass cosmological phase transitions in the early universe and the transition into a quark-gluon…
These are introductory lectures to some aspects of the physics of strongly correlated electron systems. I first explain the main reasons for strong correlations in several classes of materials. The basic principles of dynamical mean-field…
Using Ioffe-Regel-Mott (IRM) criterion for strong localization crossover in disordered doped 2D electron systems, we theoretically study the relationships among the three key experimentally determined localization quantities: critical…
We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is…
We investigate magnetoresistance of a square array of superconducting islands placed on a normal metal, which offers a unique tunable laboratory for realizing and exploring quantum many-body systems and their dynamics. A vortex Mott…
We discuss a recent mapping of the Anderson-Mott metal-insulator transition onto a random field magnet problem. The most important new idea introduced is to describe the metal-insulator transition in terms of an order parameter expansion…
We carefully revisit the electron-boson scattering problem, going beyond popular semi-classical treatments. By providing numerically exact results valid at finite temperatures, we demonstrate the existence of a regime of electron-boson…
We review our recent theoretical results for mesoscopic fluctuations of the local density of states in the presence of electron-electron interaction. We focus on the two specific cases: (i) a vicinity of interacting critical point…
Disorder is ubiquitous in solid-state systems, and its crucial influence on transport properties was revealed by the discovery of Anderson localization. Generally speaking, all bulk states will be exponentially localized in the strong…