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The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate…

Effect of growth orientation on charge- and orbital-ordering (CO-OO) phenomena has been studied for Pr0.5Ca0.5MnO3 epitaxial thin films fabricated on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates by means of resistivity, synchrotron…

Strongly Correlated Electrons · Physics 2009-10-17 D. Okuyama , M. Nakamura , Y. Wakabayashi , H. Itoh , R. Kumai , H. Yamada , Y. Taguchi , T. Arima , M. Kawasaki , Y. Tokura

We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis…

Strongly Correlated Electrons · Physics 2015-06-25 A. Venimadhav , A. Soukiassian , D. A. Tenne , Qi Li , X. X. Xi , D. G. Schlom , R. Arroyave , Z. K. Liu , H. P. Sun , Xiaoqing Pan , Minhyea Lee , N. P. Ong

The dynamics of the charge ordered (CO) state under non-equilibrium conditions created by strong dc-electric field (~106 V/cm) and photo-illumination with short (~ 6 ns) laser pulses is investigated in Bi1-xCaxMnO3 (x > 0.5) epitaxial…

Strongly Correlated Electrons · Physics 2007-05-23 S. Chaudhuri , R. C. Budhani

The structure of thin terminated Bi(1 1 1) films of approximately 1 nm thickness is investigated from first principles. Our density functional theory calculations show that covalent bonds to the surface can change the orientation of the…

Materials Science · Physics 2019-07-16 Christian König , Stephen Fahy , James C. Greer

Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy and characterized by transmission and scanning electron microscopy, and x-ray diffraction. The first Fe3Si film on GaAs(001) is growing epitaxially as (001)…

Materials Science · Physics 2015-12-10 Bernd Jenichen , Uwe Jahn , Andrei Nikulin , Jens Herfort , Holm Kirmse

Molecular beam epitaxy of K-doped Ba122 (Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$) superconductor was realized on a MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial…

Superconductivity · Physics 2022-07-15 Dongyi Qin , Kazumasa Iida , Zimeng Guo , Chao Wang , Hikaru Saito , Satoshi Hata , Michio Naito , Akiyasu Yamamoto

Bi(0001) films with thicknesses up to several bilayers (BLs) are grown on Se-terminated Bi$_2$Se$_3$(0001) surfaces, and low energy electron diffraction (LEED), low energy ion scattering (LEIS) and atomic force microscopy (AFM) are used to…

Materials Science · Physics 2018-08-01 Haoshan Zhu , Weimin Zhou , Jory A. Yarmoff

Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in…

Quantum transport measurements including the Altshuler-Aronov-Spivak (AAS) and Aharonov-Bohm (AB) effects, universal conductance fluctuations (UCF), and weak anti-localization (WAL) have been carried out on epitaxial Bi thin films ($10-70$…

Mesoscale and Nanoscale Physics · Physics 2017-07-07 Kai Zhu , Lin Wu , Xinxin Gong , Shunhao Xiao , Shiyan Li , Xiaofeng Jin , Mengyu Yao , Dong Qian , Meng Wu , Ji Feng , Qian Niu , Fernando de Juan , Dung-Hai Lee

Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported…

We have developed an approach to grow high quality ultrathin films of La$_{2-x}$Sr$_x$CuO$_{4}$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface.…

Superconductivity · Physics 2015-06-24 A. Rufenacht , P. Chappatte , S. Gariglio , Ch. Leemann , J. Fompeyrine , J. -P. Locquet , P. Martinoli

A detailed nanoscale structural characterization was performed on high-quality La0.66Sr0.33MnO3 (LSMO) thin films of different thicknesses and deposited by pulsed laser deposition onto buffered Si (100) substrates. A multilayered structure…

Materials Science · Physics 2020-09-16 Aneely Carrero , Augusto Roman , Myriam Aguirre , Laura B. Steren

Thin films of V2O3 have been grown on Au(111) and W(110). It is possible to prepare two different surface terminations: the first one is vanadium terminated whereas the second one exhibits additional oxygen atoms, forming vanadyl groups…

Other Condensed Matter · Physics 2007-05-23 Anne-Claire Dupuis

The two-dimensional electron gas (2DEG) found in KTaO3-based interfaces has garnered attention due to its remarkable electronic properties. In this study, we investigated the conducting system embedded at the Si3N4/Al//KTO(110)…

Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet…

BaBiO3 has lately gained high research attention as a parent material for an interesting family of alloyed compositions with multiple technological applications. In order to grow a variety of structures, a versatile deposition tool such as…

Materials Science · Physics 2025-04-29 Islam Ahmed , Stefan De Gendt , Clement Merckling

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality, single crystalline thin films with large size is critical.…

We report combined experimental and first principles investigations of hydrogen absorption in epitaxial vanadium films on MgO(001) with nominal thicknesses of 10 nm and 50 nm. In - situ optical transmission and four - probe resistance…

Materials Science · Physics 2025-11-11 Qiuxiang Zhang , Yan Zhu , Xiaofang Peng , Weiguang Yang , Yuping Le , Xiao Xin