Related papers: The mechanism of ion induced amorphization in Si
Cesium adsorption on 2x4 GaAs (001) was studied by photoemission and low energy electron diffraction. The different Cs induced changes of the As 3d and Ga 3d core level spectra show that charge transfer is almost complete for Ga surface…
The covariant and non-covariant Quantum Molecular Dynamics models are applied to investigate possible relativistic effects in heavy ion collisions at SIS energies. These relativistic effects which arise due to the full covariant treatment…
In the context of an idealized model describing an atom coupled to black-body radiation at a sufficiently high positive temperature, we show that the atom will end up being ionized in the limit of large times. Mathematically, this is…
Amorphization of silicon is crucial to applications in photonics, microelectronics and solar cell technologies. Ultrafast lasers have been used to generate amorphous silicon from crystalline silicon using rapid nonthermal melting and…
A two-dimensional model atom is employed to study the ionization behavior of initially excited atomic states in highly-frequent intense laser pulses beyond the dipole approximation. An additional regime of ionization suppression is found at…
Cr2AlC materials were irradiated with 7 MeV Xe26+ ions and 500 keV He2+ ions at room temperature. A structural transition with an increased c lattice parameter and a decreased a lattice parameter occurs after irradiation to doses above 1…
Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and…
The oxidation of NO molecules on epoxy-functionalized highly oriented pyrolytic graphite, thermalized at 300 K, was studied by means of ab initio molecular dynamics (AIMD) calculations. Four collision energies and two different orientations…
Virtual melting (VM) as alternative deformation and stress relaxation mechanisms under extreme load is directly validated by molecular dynamics (MD) simulations of the simple shear of single crystal Si I at a temperature 1,383 K below the…
Our investigations on porous Si show that on increase of pressure it undergoes crystalline phase transitions instead of pressure induced amorphization - claimed earlier, and the amorphous phase appears only on release of pressure. This…
Over the last years several experimental and theoretical studies of diffusion kinetics on the nanoscale have shown that the time evolution differs from the classical Fickian law (kc=0.5). However, all work was based on crystalline samples…
Crystalline to amorphous phase transformation during initial lithiation in (100) silicon-wafers is studied in an electrochemical cell with lithium metal as the counter and reference electrode. It is demonstrated that severe stress jumps…
The structural features of the interface between the cystalline and amorphous phases of Si solid are studied in simulations based on a combination of empirical interatomic potentials and a nonorthogonal tight-binding model. The…
In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125-230 K using a variable-temperature scanning tunneling…
A disorder-order transition from amorphous carbon (aC) to layered amorphous graphene (LAG) has been predicted using ab-initio methods. Amorphous carbon at densities close to the graphitic density show a strong proclivity to layer in NVT…
The energy spectra of the $\alpha$ particles emitted in the reactions $^{16}$O (7-10 MeV/nucleon) + $^{12}$C have been measured in the center of mass angular range of 25$^\circ$ $\lesssim \theta_{c.m.} \lesssim$ 70$^\circ$. The experimental…
This study investigates the ionization and excitation processes induced by electron impact between two configurations or superconfigurations. Rate coefficients are calculated for transition arrays or super-transition arrays rather than…
Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces…
Selenium (Se) substitution drastically increases the transition temperature of iridium ditelluride (IrTe$_{2}$) to a diamagnetic superstructure from 278 K to 560 K. Transmission electron microscopy experiments revealed that this enhancement…
Inclusive as well as exclusive energy spectra of the light charged particles emitted in the $^{28}Si(E_{lab}=112.6 MeV) + ^{28}Si,^{12}C$ reactions have been measured at the Strasbourg VIVITRON facility in the angular range 15^0 - 150^0,…