Memory effect under pressure in low density amorphous silicon
Materials Science
2010-07-23 v1
Abstract
Our investigations on porous Si show that on increase of pressure it undergoes crystalline phase transitions instead of pressure induced amorphization - claimed earlier, and the amorphous phase appears only on release of pressure. This amorphous phase, when subjected to higher pressures, transforms reversibly to a higher coordinated primitive hexagonal phase showing a kind of memory effect which may be the only example of its kind in the elemental solids. First principles calculations and thermodynamic arguments help understand these observations.
Cite
@article{arxiv.1007.3813,
title = {Memory effect under pressure in low density amorphous silicon},
author = {Nandini Garg and K. K. Pandey and K. V. Shanavas and C. A. Betty and Surinder M Sharma},
journal= {arXiv preprint arXiv:1007.3813},
year = {2010}
}