Related papers: Contact resistance and shot noise in graphene tran…
The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not…
The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance…
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the…
Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…
We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We…
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of…
The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as function of the sample dimensions in the same way as in a…
The contact properties between metal and graphene were examined. The electrical measurement on a multiprobe device with different contact areas revealed that the current flow preferentially entered graphene at the edge of the contact metal.…
We investigate the shot noise of an impurity-free graphene flake as a function of the chemical potential. For large width to length ratios, this noise has been predicted and observed to exhibit universal characteristics at the Dirac point.…
We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same…
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…
Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole…
The current and the shot noise in a graphene sheet were analyzed in the ballistic regime for arbitrary voltage drops between leads and the sheet in the limit of infinite aspect ratio of the sheet width to its length, when quantization of…
We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact…
We study time-dependent electron transport and quantum noise in a ballistic graphene field effect transistor driven by an ac gate potential. The non-linear response to the ac signal is computed through Floquet theory for scattering states…
We have investigated electrical transport and shot noise in graphene field effect devices. In large width over length ratio $W/L$ graphene strips, we have measured shot noise at low frequency ($f$ = 600--850 MHz) in the temperature range of…
The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a…
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…