Related papers: Electron spin blockade and singlet-triplet transit…
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…
We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the…
Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment has been repeated with electrons in vacuum up to the more massive $C_{60}$ molecules. Mesoscopic rings threaded by a magnetic flux…
We have studied the magnetic field dependence of the ground state energies in a small Si quantum dot. At low fields the first five electrons are added in a spin-up -- spin-down sequence minimizing the total spin. This sequence does not hold…
In this study we explain the role of applied magnetic field in inelastic conduction properties of a Quantum Dot coupled with an oscillator . In the presence of strong applied magnetic field coulomb blockade effects become weak due to…
We model spin blockade for optically excited electrons and holes in a charged semiconductor quantum dot. We study the case where the quantum dot is initially charged with a single electron and is then filled with an additional, optically…
We study the spin states of a few-electron quantum dot defined in a two-dimensional electron gas, by applying a large in-plane magnetic field. We observe the Zeeman splitting of the two-electron spin triplet states. Also, the one-electron…
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
Spin dependent single electron tunneling in a ferromagnetic double junction is investigated theoretically in the limit of incoherent sequential tunneling. The junction consists of a small nonmagnetic metallic grain with discrete energy…
We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing…
Single electron tunneling is studied in a many electron quantum dot in high magnetic fields. For such a system multiple transitions of the spin configuration are theoretically predicted. With a combination of spin blockade and Kondo effect…
Spin-orbit coupling is key to all-electrical control of quantum-dot spin qubits, and is frequently stronger for holes than for electrons. Here we investigate Pauli spin blockade for two heavy holes in a gated double quantum dot in an…
We study the nonequilibrium spin transport through a quantum dot containing two spin levels coupled to the magnetic electrodes. A formula for the spin-dependent current is obtained and is applied to discuss the linear conductance and…
We investigated electron transport through ultra small Si quantum dots. We found that the $B$-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states…
The interplay between magnetic field and microwave applied in a single-electron transistor(SET) has a profound influence on the Kondo effect, as shown in a recent experiment[B. Hemingway, S. Herbert, M. Melloch and A. Kogan,…
We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a…
We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance…
We present experimental and theoretical results on a new regime in quantum dots in which the filling factor 2 singlet state is replaced by new spin polarized phases. We make use of spin blockade spectroscopy to identify the transition to…
We determine the spin exchange coupling J between two electrons located in two vertically tunnel-coupled quantum dots, and its variation when magnetic (B) and electric (E) fields (both in-plane and perpendicular) are applied. We predict a…