Related papers: Quantum resistance metrology in graphene
In this report we experimentally probe the non-equilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density ($\sim$1A/m). The measured critical currents for dissipationless transport in the…
We numerically study the interplay of band structure, topological invariant and disorder effect in two-dimensional electron system of graphene in a magnetic field. Two \emph{distinct} quantum Hall effect (QHE) regimes exist in the energy…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…
The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon featuring quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene/monolayer WS2 heterostructure. Distinct from…
We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and…
The integer quantum Hall effect is a well-studied phenomenon at frequencies below about 100 Hz. The plateaus in high-frequency Hall conductivity were experimentally proven to retain up to 33 GHz, but the behavior at higher frequencies has…
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam…
The quantum Hall effect (QHE) is a topologically protected phenomenon which has been observed in various systems. In experiments, the size of Hall bar device to realize the QHE is generally much larger than the phase coherence length, in…
The longitudinal resistances of a six-terminal graphene p-n junction under a perpendicular magnetic field are investigated. Because of the chirality of the Hall edge states, the longitudinal resistances on top and bottom edges of the…
We study nonlinear optical response of graphene in the quantum Hall regime to an intense laser pulse. In particular, we consider harmonic generation process. We demonstrate that the generalized magneto-optical conductivity of graphene on…
In this study, we conducted a numerical investigation on the Hall conductance ($\sigma_{Hall}$) of graphene based on the magnetic energy band structure calculated using a nonperturbative magnetic-field-containing relativistic tight-binding…
We present experimental results on the quantized Hall insulator in two dimensions. This insulator, with vanishing conductivities, is characterized by the quantization (within experimental accuracy) of the Hall resistance in units of the…
Measurements of basal plane longitudinal rho_b(B) and Hall rho_H(B) resistivities were performed on highly oriented pyrolytic graphite (HOPG) samples in pulsed magnetic field up to B = 50 T applied perpendicular to graphene planes, and…
We have investigated the Hall resistance $R_H$ near the plateau-insulator transition of a two-dimensional electron gas in the quantum critical regime. High-field magnetotransport data taken on a low-mobility InGaAs/InP heterostructure with…
We report on the observation of the quantum Hall effect at high temperatures in HgTe quantum wells with a finite band gap and a thickness below and above the critical thickness $d_\textnormal{c}$ that separates a conventional semiconductor…
The presence of strong disorder in graphene nanoribbons yields low-mobility diffusive transport at high charge densities, whereas a transport gap occurs at low densities. Here, we investigate the longitudinal and transverse…
We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and…
We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates…
We have measured the quantum-Hall activation gaps in graphene at filling factors $\nu=2$ and $\nu=6$ for magnetic fields up to 32 T and temperatures from 4 K to 300 K. The $\nu =6$ gap can be described by thermal excitation to broadened…
We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…