Related papers: Quantum Hall conductance of two-terminal graphene …
We employ dual-gated 30{\deg}-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a…
We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that form in the narrowest part of the ribbon, in the valleys and…
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…
We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the…
We study the plateaux of the integer quantum Hall resistance in a bilayer electron system in tilted magnetic fields. In a narrow range of tilt angles and at certain magnetic fields, the plateau level deviates appreciably from the quantized…
We report an observation of conductance fuctuations (CFs) in the bipolar regime of quantum hall (QH) plateaus in graphene (p-n-p/n-p-n) devices. The CFs in the bipolar regime are shown to decrease with increasing bias and temperature. At…
By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our…
In graphene, which is an atomic layer of crystalline carbon, two of the distinguishing properties of the material are the charge carriers two-dimensional and relativistic character. The first experimental evidence of the two-dimensional…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…
We review the fabrication and key transport properties of graphene double layers, consisting of two graphene monolayers placed in close proximity, independently contacted, and separated by an ultra-thin dielectric. We outline a simple band…
In the quantum Hall regime the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero…
We theoretically investigate electrical transport in a quantum Hall system hosting bulk and edge current carrying states. Spatially varying magnetic and electric confinement creates pairs of current carrying lines that drift in the same or…
We present a gating scheme to separate even strong parallel conductance from the magneto-transport signatures and properties of a two-dimensional electron system. By varying the electron density in the parallel conducting layer, we can…
Bilayer graphene in a perpendicular electric field can host domain walls between regions of reversed field direction or interlayer stacking. The gapless modes propagating along these domain walls, while not strictly topological,…
Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder…
We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of "hotspots" where the…
Quantum oscillations of metallic systems at low temperatures is one of the key rules to experimentally access their electronic properties, such as energy spectrum, scattering mechanisms, geometry of Fermi surface and many other features.…
We study experimentally the reproducible conductance fluctuations between the quantum Hall plateaus in the conductance of two-terminal submicron silicon MOSFETs. For the dramatic fluctuations at the insulator-to-first-plateau transition we…