Related papers: Transfer Characteristics in Graphene Field-Effect …
We report on the formation of critical states in disordered graphene, at the origin of variable and unconventional transport properties in the quantum Hall regime, such as a zero-energy Hall conductance plateau in the absence of an energy…
Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
Conductions fluctuations (CF) are studied in single layer graphene devices with superconducting source and drain contacts made from aluminium. The CF are found to be enhanced by superconductivity by a factor of 1.4 to 2. This (near)…
We develop a model for carrier generation by impact ionization in graphene, which shows that this effect is non-negligible because of the vanishing energy gap, even for carrier transport in moderate electric fields. Our theory is applied to…
Graphene nanoribbons (GNR) in mutually perpendicular electric and magnetic fields are shown to exhibit dramatic changes in their band structure and electron transport properties. A strong electric field across the ribbon induces multiple…
We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA cleaning step to improve the surface quality. In contrast to…
We develop a theory for the renormalization of the phonon energy dispersion in graphene due to the combined effects of both Coulomb and electron-phonon (e-ph) interactions. We obtain the renormalized phonon energy spectrum by an exact…
The discovery of unusual heat conduction properties of graphene has led to a surge of theoretical and experimental studies of phonon transport in two-dimensional material systems. The rapidly developing graphene thermal field spans from…
We investigate the effect of electron- $\mathrm{A}_{1g}$ phonon coupling on the gapless electronic band dispersion of the pristine graphene. The electron-phonon interaction is introduced through a Kekul\'{e}-type distortion giving rise to…
We study charge transport in one-dimensional graphene superlattices created by applying layered periodic and disordered potentials. It is shown that the transport and spectral properties of such structures are strongly anisotropic. In the…
We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it…
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias…
We consider a graphene sheet in the vicinity of a substrate, which contains charged impurities. An analytic expression for the probability distribution function of voltage fluctuations due to the charged impurities is derived. The…
We show that the low-energy electronic structure of graphene under a one-dimensional inhomogeneous magnetic field can be mapped into that of graphene under an electric field or vice versa. As a direct application of this transformation, we…
Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole…
Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although two-dimensional (2D) materials provide a…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
Graphene is a unique two-dimensional material with rich new physics and great promise for applications in electronic devices. Physical phenomena such as the half-integer quantum Hall effect and high carrier mobility are critically dependent…
Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…