Related papers: Optical transition in self-assembled InAs/GaAs qua…
In this paper, we study theoretically the electron and spectral properties of Ge1-xSnx systems, including alloys, cubic- and spherical quantum dots. The single-particle electron and hole states are calculated within the sp3d5s*…
We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and…
Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin…
Gauge theory requires physical observables to be gauge-independent. However, ever since Lamb noticed the problem of gauge selection in calculating atomic spontaneous radiation spectrum, the problem of gauge dependence was encountered in…
We demonstrate how the controlled positioning of a plasmonic nanoparticle modifies the photoluminescence of a single epitaxial GaAs quantum dot. The antenna particle leads to an increase of the luminescence intensity by about a factor of…
Low-energy continuous states of electron in heterosrtucture with periodically placed quantum-dot sheets are studied theoretically. The Green's function of electron is governed by the Dyson equation with the self-energy function which is…
We show that elastic interactions of an array of self-assembled quantum dots in a parent material matrix are markedly distinct from the elastic field created by a single point defect, and can explain the observed abrupt…
We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these…
In this paper we analyze the thermodynamic properties of a photon gas under the influence of a background electromagnetic field in the context of any nonlinear electrodynamics. Neglecting the self-interaction of photons, we obtain a general…
Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic redistribution of the island material after coverage by a 1 nm thick InP layer. The…
We establish a correlation between the internal stress in InN epilayers and their optical properties such as the measured absorption band edge and photoluminescence emission wavelength. By a careful evaluation of the lattice constants of…
The experimental parameter ranges needed to generate superfluidity in optical and drag experiments in GaAs double quantum wells are determined, using a formalism that includes self-consistent screening of the Coulomb pairing interaction in…
We use the Bogoliubov theory of atoms in an optical lattice to study the approach to the Mott-insulator transition. We derive an explicit expression for the superfluid density based on the rigidity of the system under phase variations. This…
The development of multi-node quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates and detectors on a single chip is highly desirable for the realization of large…
We derive the equation of state of a two-dimensional Bose gas in an optical lattice in the framework of the Bose-Hubbard model. We focus on the vicinity of the multicritical points where the quantum phase transition between the Mott…
Two electron spins in quantum dots coupled through coherent tunneling are generally acknowledged to approximately obey Heisenberg isotropic exchange. This has not been established for two holes. Here we measure the spectra of two holes and…
The relation between the macroscopic quantum coherent nature of superfluids and the coherent properties of optical interference patterns will be utilized to examine the optical properties of superfluid hydrodynamics. A Bragg pattern imposed…
This study compares cross-sectional scanning tunnelling microscopy (XSTM) and atom probe tomography (APT). We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two…
Photoluminescence spectroscopy of single InAs quantum dots at cryogenic temperatures (~14 K) is performed using a micron-scale optical fiber taper waveguide as a near-field optic. The measured collection efficiency of quantum dot…
While electronic and spectroscopic properties of self-assembled In_{1-x}Ga_{x}As/GaAs dots depend on their shape, height and alloy compositions, these characteristics are often not known accurately from experiment. This creates a difficulty…