The development of multi-node quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of pre-selected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multi-mode interference beamsplitter via in-situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g(2)(0)=0.13±0.02. Due to its high patterning resolution as well as spectral and spatial control, in-situ electron beam lithography allows for integration of pre-selected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way towards multi-node, fully integrated quantum photonic chips.
@article{arxiv.1712.03837,
title = {Deterministic integration of quantum dots into on-chip multi-mode interference beamsplitters using in-situ electron beam lithography},
author = {Peter Schnauber and Johannes Schall and Samir Bounouar and Theresa Höhne and Suk-In Park and Geun-Hwan Ryu and Tobias Heindel and Sven Burger and Jin-Dong Song and Sven Rodt and Stephan Reitzenstein},
journal= {arXiv preprint arXiv:1712.03837},
year = {2018}
}