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The recent excitement about Dirac and Weyl fermion systems has renewed interest in magnetotransport properties of multi-carrier systems. However, the complexity of their analysis, even in the simplest two-carrier case, has hampered a good…

Mesoscale and Nanoscale Physics · Physics 2019-04-24 G. Eguchi , S. Paschen

Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO_3 / SrTiO_3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using…

Superconductivity · Physics 2015-05-13 C. Bell , S. Harashima , Y. Kozuka , M. Kim , B. G. Kim , Y. Hikita , H. Y. Hwang

We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 A. A. Shashkin , V. T. Dolgopolov , E. V. Deviatov , B. Irmer , A. G. C. Haubrich , J. P. Kotthaus , M. Bichler , W. Wegscheider

Analytic results for the conductance of a molecular wire attached to mesoscopic tubule leads are obtained. They permit to study linear transport in presence of low dimensional leads in the whole range of parameters. In particular contact…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 G. Cuniberti , G. Fagas , K. Richter

A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and…

Transport through molecular contacts with a sluggish intramolecular vibrational mode strongly coupled to excess charges is studied far from equilibrium. A Born-Oppenheimer approximation in steady state reveals voltage dependent energy…

Mesoscale and Nanoscale Physics · Physics 2012-06-27 Lars Kecke , Joachim Ankerhold

Transformer terminal equivalents obtained via admittance measurements are suitable for simulating high-frequency transient interaction between the transformer and the network. This paper augments the terminal equivalent approach with a…

Computational Engineering, Finance, and Science · Computer Science 2016-11-22 Bjorn Gustavsen , Alvaro Portillo , Rodrigo Ronchi , Asgeir Mjelve

Recent advances in topologically robust waveguiding for electromagnetic systems have presented opportunities for improving practical photonic and microwave devices. To bring this rich area of physics within the reach of application, it is…

Applied Physics · Physics 2021-04-07 Robert J. Davis , Dia'aaldin J. Bisharat , Daniel F. Sievenpiper

Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…

Materials Science · Physics 2012-09-06 Luqiao Liu , Chi-Feng Pai , D. C. Ralph , R. A. Buhrman

We study single-electron transport in a three-ion molecule with strong uniaxial anisotropy and in the presence of a transverse magnetic field. Two magnetic ions are connected to each other through a third, nonmagnetic ion. The magnetic ions…

Mesoscale and Nanoscale Physics · Physics 2014-05-12 Javier I. Romero , Eduardo R. Mucciolo

Three-terminal electrochemical ionic synapses (EIoS) have recently attracted interest for in-memory computing applications. These devices utilize electrochemical ion intercalation to modulate the ion concentration in the channel material.…

Mesoscale and Nanoscale Physics · Physics 2025-08-01 Michael L. Li , Dingyu Shen , Jesus A. del Alamo , Martin Z. Bazant

A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible…

Other Condensed Matter · Physics 2007-05-23 Jaroslav Fabian , Igor Zutic , S. Das Sarma

Superconductor-based light-emitting diode (superconductor-based LED) in strong light-confinement regime are characterized as a superconductor-based three-terminal device, and its transport properties are quantitatively investigated. In the…

Diffusional dynamics of the donor-acceptor distance in electron-transfer reactions are responsible for the appearance of a new time scale of diffusion over the distance of falloff of electronic tunneling. The distance dynamics compete with…

Biological Physics · Physics 2022-09-21 Dmitry V. Matyushov

The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…

Strongly Correlated Electrons · Physics 2016-10-26 Peter Fulde , Stefan Kettemann

Combining scanning electron microscopy (SEM) and electron-beam-induced current (EBIC) imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially…

Materials Science · Physics 2009-11-07 C. Rossel , G. I. Meijer , D. Bremaud , D. Widmer

The counterpropagating edge states of a two-dimensional topological insulator (TI) carry electrons of opposite spins. We investigate the transport properties of edge states in a two-dimensional TI which is contacted to ferromagnetic leads.…

Mesoscale and Nanoscale Physics · Physics 2012-09-25 Yuan Li , M. B. A. Jalil , Seng Ghee Tan , GuangHui Zhou

Hydrogen-bond networks govern molecular structure and function across chemistry, biology and materials science, yet their deterministic control at the atomic scale remains a central challenge (1-9).Here, we directly visualize how an…

Materials Science · Physics 2026-04-29 Nassar Doudin , Jian Jiang , Chun Tang , Xiao Cheng Zeng , Mohammed Th. Hassan

We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts.…

Mesoscale and Nanoscale Physics · Physics 2010-10-13 Laurens H. Willems van Beveren , Kuan Y. Tan , Nai-Shyan Lai , Andrew S. Dzurak , Alex R. Hamilton

The insulator-to-metal transition in Mott insulators is the key mechanism for a novel class of electronic devices, belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control…