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Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…
We investigated the effect of material choice and orientation in limiting source to drain tunneling (SDT) in nanowire (NW) p-MOSFETs. Si, Ge, GaSb, and Ge0.96Sn0.04 nanowire MOSFETs (NWFETs) were simulated using rigorous ballistic quantum…
Nanostructuring on length scales corresponding to phonon mean free paths provides control over heat flow in semiconductors and makes it possible to engineer their thermal properties. However, the influence of boundaries limits the validity…
We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional…
Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility…
Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a…
Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter…
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum transport simulator based on the atomistic sp3d5s*…
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have…
We compute both electron- and phonon transmissions in thin disordered silicon nanowires. Our atomistic approach is based on tight-binding and empirical potential descriptions of the electronic and phononic systems, respectively. Surface…
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that…
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper,…
In this letter, we report a three-dimensional (3D) quantum mechanical simulation to investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire transistors (SNWTs). We treat the microscopic…
Valence subband and transport properties of p-type metal-oxide-semiconductor (PMOS) inversion layer in uniaxially strained (110) and (111) Si channel have been studied theoretically in this work. Equal energy lines, carrier concentration…
It is shown that semiconductor nanoscale resonators with extreme dielectric confinement accelerate the diffusion of electron-hole pairs excited by nonlinear absorption. These novel cavity designs may lead to optical switches with superior…
Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures…
An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF…
Band Structures and optical matrix elements of quantum wires(QWR's) made of short-period superlattices(SPS) with strain-induced lateral ordering(SILO) are investigated theoretically via an effective bond-orbital model(EBOM) combined with a…
Density functional theory and molecular dynamics simulations have been used to optimize the structure of nanowires of SiO2. The starting structures were based on b-cristobalite, orthotridymite, b-tridymite, and rutile crystals. The analysis…
A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the…