Related papers: InAs-GaSb laser: Prospects for efficient THz emiss…
A simple two-well design for terahertz quantum cascade lasers is proposed which is based on scattering injection and the efficient extraction of electrons from the lower laser level by resonant tunneling. In contrast to existing designs…
The robustness of quantum edge transport in InAs/GaSb quantum wells in the presence of magnetic fields raises an issue on the fate of topological phases of matter under time-reversal symmetry breaking. A peculiar band structure evolution in…
[111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW)…
A way to considerably enhance terahertz radiation, emitted in the interaction of intense mid-infrared laser pulses with atomic gases, in both the total energy and the electric-field amplitude is suggested. The scheme is based on the…
Recently, there has been a growing interest in integrated THz photonics for various applications in communications, spectroscopy and sensing. We present a new integrated photonic platform based on active and passive elements integrated in a…
The gapless energy band spectra make the structures based on graphene and graphene bilayers with the population inversion created by optical or injection pumping to be promising media for the interband terahertz (THz) lasing. However, a…
Due to their excellent optical and electrical properties as well as versatile growth and fabrication processes, lead halide perovskites have been widely considered as promising candidates for green energy and opto-electronic related…
Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents…
We exploit InSb's magnetic-induced optical properties to propose THz sub-wavelength antenna designs that actively tune the radiative decay rates of dipole emitters at their proximity. The proposed designs include a spherical InSb antenna…
The two-color strong-field mixing in gas medium is a widely-used approach to generate bright broadband terahertz (THz) radiation. Here, we present a new and counterintuitive method to promote THz performance in two-color scheme. Beyond our…
Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. The results for cases of 2-QW (2 Quantum Wells) and 3-QW structures…
The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions…
Terahertz quantum cascade laser sources based on intra-cavity difference frequency generation from mid-IR devices are an important asset for applications in rotational molecular spectroscopy and sensing, beingthe only electrically pumped…
A novel scheme for generating powerful terahertz (THz) radiation based on laser-solid interactions is proposed. When a $p$-polarized femtosecond laser impinges obliquely on a plane solid target and the target partially blocks the laser…
Electromagnetic radiation within the terahertz (THz) frequency range is of great interest for applications in remote sensing and time-domain spectroscopy. The laser-induced plasmas are promising mediums for generating THz radiation. It has…
Lasing and steady state superradiance are two phenomena that may appear at first glance to be distinct. In a laser, phase information is maintained by a macroscopic intracavity light field, and the robustness of this phase is what leads to…
We investigate terahertz emission from two-color fs-laser-induced microplasmas. Under strongest focusing conditions, microplasmas are shown to act as point-sources for broadband terahertz-to-far-infrared radiation, where the emission…
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
InAs/GaSb heterostructure is one of the systems where quantum spin Hall effect is predicted to arise. However, as confirmed by recent experimental studies, the most significant highlight of the effect i.e., the conductance quantization due…