Related papers: Effect of parallel magnetic field on the Zero Diff…
We theoretically predict the radiation-induced ``zero-resistance state'' near half filling of the lowest Landau level, which is caused by the photon-assisted transport in the presence of oscillating density of states due to composite…
Giant-amplitude oscillations in dc magnetoresistance of a high-mobility two-dimensional electron system can be induced by millimeterwave irradiations, leading to zero-resistance states at the oscillation minima. Following a brief overview…
Recently reported giant anisotropy in the longitudinal resistivity of a 2D electron system with valence Landau level index $N \ge 2$ has been interpreted as a signal of unidirectional charge density wave (UCDW) ground states. We report on…
We report electrical transport measurements in a tilted magnetic field on a high-mobility two-dimensional electron system confined at the MgZnO/ZnO heterointerface. The observation of multiple crossing events of spin-resolved Landau levels…
The dynamics of the two-dimensional (2D) state in driven tridimensional (3D) incompressible magnetohydrodynamic turbulence is investigated through high-resolution direct numerical simulations and in the presence of an external magnetic…
We report an anti-levitation behavior of Landau levels in vanishing magnetic fields in a high quality hetero-junction insulated-gated field-effect transistor. We found, in the Landau fan diagram of electron density versus magnetic field,…
We have studied the effect of an in-plane magnetic field on Hall field-induced resistance oscillations in high mobility two-dimensional electron systems. We have found that the oscillation frequency depends only on the perpendicular…
We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime, for k_BT\tau/\hbar>1. The MR grows with field and exhibits a maximum…
Magnetotransport measurements are a popular way of characterizing the electronic structure of topological materials and often the resulting datasets cannot be described by the well-known Drude model due to large, non-parabolic…
Low-temperature, electronic transport in Landau levels N>1 of a two-dimensional electron system is strongly anisotropic. At half-filling of either spin level of each such Landau level the magnetoresistance either collapses to form a deep…
It is shown that in rather strong magnetic field the interlayer electron conductivity is exponentially damped by the Coulomb barrier arising from the formation of polaron around each localized electron state. The theoretical model is…
As a canonical response to the applied magnetic field, the electronic states of a metal are fundamentally reorganized into Landau levels. In Dirac metals, Landau levels can be expected without magnetic fields, provided that an inhomogeneous…
We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the…
The phenomena of odd-parity magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager's theorem…
We study the problem of two particles with Coulomb repulsion in a two-dimensional disordered potential in the presence of a magnetic field. For the regime, when without interaction all states are well localized, it is shown that above a…
The effect of a unidirectional periodic potential on the orientation of the stripe state is studied for the two-dimensional electron system at half-filled high Landau levels. By considering a quantum well with two electric subbands, it is…
The Coulomb interaction contribution to the conductance is investigated in a phase-coherent disordered 2-dimensional electron gas, which resistance can be varied by an overall gate electrode. Its magnitude of dGeei=-0.3 e^2/h is obtained by…
We have investigated the effect of an in plane parallel magnetic field (B_||) on two high mobility metallic-like dilute two-dimensional hole gas (2DHG) systems in GaAs quantum wells. The experiments reveal that, while suppressing the…
Two-component conductors -- e.g., semi-metals and narrow band semiconductors -- often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise…
We show that the joint effect of spin-orbit and magnetic fields leads to a spin polarization perpendicular to the plane of a two-dimensional electron system with Rashba spin-orbit coupling and in-plane parallel dc magnetic and electric…