English

Odd-parity linear magnetoresistance and the planar Hall effect

Strongly Correlated Electrons 2020-01-14 v1

Abstract

The phenomena of odd-parity magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager's theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic layers at domain walls, which both exhibit odd-parity magnetoresistive behavior. The peculiar angular variation of the response with respect to the relative alignments of the magnetization, magnetic field, and current reveal the two underlying microscopic mechanisms: spin-polarization-dependent scattering of a Zeeman-shifted Fermi surface and magnetoresistance driven by the anomalous velocity physics usually associated with the anomalous Hall effect.

Keywords

Cite

@article{arxiv.1904.00330,
  title  = {Odd-parity linear magnetoresistance and the planar Hall effect},
  author = {Yishu Wang and Patrick A. Lee and D. M. Silevitch and F. Gomez and S. E. Cooper and Y. Ren and J. -Q. Yan and D. Mandrus and T. F. Rosenbaum and Yejun Feng},
  journal= {arXiv preprint arXiv:1904.00330},
  year   = {2020}
}
R2 v1 2026-06-23T08:24:15.621Z