Related papers: Time-Resolved characterization of InAsP/InP quantu…
For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyzed with a rate equation model. The WL thicknesses showed a…
Using a combination of continuous wave and time-resolved spectroscopy, we study the effects of interfacial conditions on the radiative lifetimes and photoluminescence intensities of colloidal CdTe/CdS quantum dots (QDs) embedded in a…
Tensile-strained materials have been used to fabricate nano- and micromechanical resonators with ultra-low mechanical dissipation in the kHz to MHz frequency range. These mechanical resonators are of particular interest for force sensing…
We derive a rigorous theory of the interaction between photons and spatially extended excitons confined in quantum dots in inhomogeneous photonic materials. We show that, beyond the dipole approximation, the radiative decay rate is…
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong…
Room temperature strong coupling from CdSeS/Zn quantum-dots embedded into a tunable porous-silicon Fibonacci-conjugated array could be observed when exciton's energy was tuned either to the photonic-edge or the defect in the middle of the…
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…
The dynamics of exciton and electron-hole plasma populations is studied via time-resolved photoluminescence after nonresonant excitation. By comparing the peak emission at the exciton resonance with the emission of the continuum, it is…
We report the fabrication and characterization of a Ti$^{4+}$:Tm$^{3+}$:LiNbO$_3$ optical waveguide in view of photon-echo quantum memory applications. In particular, we investigated room- and cryogenic-temperature properties via…
We report the observation of transverse electric polarized electroluminescence from InAs/AlInAs quantum dash quantum cascade structures up to room temperature. The emission is attributed to the electric field confined along the shortest…
InAs self-assembled quantum dots were grown on strained layers of GaxIn1-xP (0 < x < 0.3) on InP substrates. We show that the quantum dots have narrow vertical dimensions, ranging between 2 to 10 monolayers only. The dot layer…
We report on a temporal evolution of photoluminescence (PL) spectroscopy of CuInS$_{2}$/ZnS colloidal quantum dots (QDs) by drop-casting on SiO$_{2}$/Si substrates and high quality factor microdisks (MDs) under different atmospheric…
The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well(MQW) heterostructure samples, it is…
Steady-state access to intraband transitions in colloidal quantum dots (CQDs), via heavy doping, allows exploiting the electromagnetic spectrum at energies below the band gap. CQD intraband optoelectronics opens up a new path to cheap mid-…
The demand for fast mid-wave infrared photodetectors is fueled by high-rate free-space optical communication and optical frequency comb spectroscopy. To date, only a few multi-GHz photodetectors have shown sensitive room-temperature…
We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the optical quality or…
We report on lasing at room temperature and at telecommunications wavelength from photonic crystal nanocavities based on InAsP/InP quantum dots. Such laser cavities with a small modal volume and high quality factor display a high…
Laser pulses with a duration of the order of femtoseconds lead to a strong excitation, heating and potentially to ablation of the irradiated material. During the time of strong excitation, the interaction of the atoms and thus the material…
The picosecond dynamics of excitons in colloidal CdSe nanorods are directly measured via their 1s to 2p-like internal transitions by ultra-broadband terahertz spectroscopy. Broadened absorption peaks from both the longitudinal and…
An excitonic insulator phase is expected to arise from the spontaneous formation of electron-hole pairs (excitons) in semiconductors where the exciton binding energy exceeds the size of the electronic band gap. At low temperature, these…