Related papers: Low Temperature Transport in Undoped Mesoscopic St…
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are…
The approximate location in the Zaanen-Sawatzky-Allen diagram of the phase-separated (Ga,Mn)As material, consisting of MnAs nanoclusters embedded in GaAs, is determined on the basis of configuration-interaction (CI) cluster-model analysis…
We describe how optical dressing can be used to generate bandstructures for ultracold atoms with non-trivial Z_2 topological order. Time reversal symmetry is preserved by simple conditions on the optical fields. We first show how to…
We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic…
Recently discovered double gamma/beta ({\gamma}/\b{eta}) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across interfaces without changing chemical compositions of…
We report the design, fabrication and characterization of ultralight highly emissive metaphotonic structures with record-low mass/area that emit thermal radiation efficiently over a broad spectral (2 to 35 microns) and angular (0-60…
Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the…
Optical embedded eigenstates are localized modes of an open structure that are compatible to radiation yet they have infinite lifetime and diverging quality factors. Their realization in nanostructures finite in all dimensions is inherently…
Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interaction. Many key observations have been made in these systems as sample quality improved over the years. Here, we present a…
The large-area synthesis of high-crystalline-quality two-dimensional (2D) materials is at the core of novel material integration for semiconductor technology. This effort relies on developing fabrication and characterization techniques that…
We report the experimental realization of a correlated insulating phase in 2D GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the…
$\beta$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important…
Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents…
We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire…
Nonlinear disordered media uniquely combine multiple scattering and second-harmonic generation. Here, we investigate the statistical properties of the nonlinear light generated within such media. We report super-Rayleigh statistics of the…
Electronic and thermoelectric properties of a two-dimensional MoS2 monolayer containing atomic defects are investigated using density functional theory. All the atomic defects have been found to exhibit endothermic nature. Electronic…
The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the doping level or applying a…
The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temperature, nonlinear optical responses, ferroelectricity, self-passivated van der…
We have measured the surface acoustic wave velocity shift in a GaAs/AlGaAs heterostructure containing a two-dimensional electron system (2DES) in a low-density regime ($<$ $10^{10}$ cm$^{-2}$) at zero magnetic field. The interaction of the…
For several decades now, ultra-high-mobility GaAs two-dimensional electron systems (2DESs) have served as the hallmark platform for various branches of research in condensed matter physics. Fundamental to this long-standing history of…