Related papers: Phonon renormalisation in doped bilayer graphene
We report the first Raman scattering measurements of BaC$_6$, SrC$_6$, and YbC$_6$, which along with new data on CaC$_6$, permits a systematic study of the phonons and the electron-phonon interaction within the doped graphene layers of…
We uncover the interlayer shear mode of multi-layer graphene samples, ranging from bilayer-graphene (BLG) to bulk graphite, and show that the corresponding Raman peak measures the interlayer coupling. This peak scales from~43cm-1 in bulk…
Twisted van der Waals heterostructures unravel a new platform to study strongly correlated quantum phases. The interlayer coupling in these heterostructures is sensitive to twist angles ($\theta$) and key to controllably tune several exotic…
Understanding the origin of superconductivity in correlated two-dimensional materials is a key step in leveraging material engineering techniques for next-generation nanoscale devices. The recent demonstration of superconductivity in Bernal…
We present a theory of the influence of band renormalization and excitonic electron-electron interaction effects on the optical conductivity $\sigma(\omega)$ of doped bilayer graphene. Using the Keldysh formalism, we derive a kinetic…
Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate. The observed upshift of the Raman G band…
We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as…
Recent infrared measurements of phonon peaks in gated bilayer graphene reveal two striking signatures of electron-phonon interaction: an asymmetric Fano lineshape and a giant variation of the peak intensity as a function of the applied gate…
We report the observation of an intense anomalous peak at 1608 cm$^{-1}$ in the Raman spectrum of graphene associated to the presence of chromium nanoparticles in contact with graphene. Bombardment with an electron beam demonstrates that…
Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier…
The two-dimensional mapping of the phonon dispersions around the $K$ point of graphite by inelastic x-ray scattering is provided. The present work resolves the longstanding issue related to the correct assignment of transverse and…
Recent experiments show how a bilayer graphene twisted around a certain magic angle becomes superconducting as it is doped into a region with approximate flat bands. We investigate the mean-field $s$-wave superconducting state in such a…
We present a systematic theory of acoustic-phonon-mediated superconductivity, which incorporates Coulomb repulsion, explaining the recent experiment in Bernal bilayer graphene under a large displacement field. The acoustic-phonon mechanism…
We derive the frequency shifts and the broadening of $\Gamma$ point longitudinal optical (LO) and transverse optical (TO) phonon modes, due to electron-phonon interaction, in graphene under uniaxial strain as a function of the electron…
While the mechanical distortions change the electronic properties of graphene significantly, the effects of electronic manipulation on its mechanical properties have not been known. Using first-principles calculation methods, we show that,…
Coherent engineering of landscape potential in crystalline materials is a rapidly evolving research field. Ultrafast optical pulses can manipulate low-frequency shear phonons in van der Waals layered materials through the dynamical dressing…
We study the effect exerted by the electrons on the flexural phonons in graphene, accounting for the attractive interaction created by the exchange of electron-hole excitations. Combining the self-consistent computation of the phonon…
We study the fine structure of the phonon G peak in the inelastic light scattering spectra of strained graphene in the presence of a quantizing magnetic field. We show that under the conditions of the magnetophonon resonance (MPR), the…
Since lattice strain and charge density affect various material properties of graphene, a reliable and efficient method is required for quantification of the two variables. While Raman spectroscopy is sensitive and non-destructive, its…
Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface…