Related papers: Proposal for a nanoscale variable resistor/electro…
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…
Superconducting circuits are promising candidates for future computational architectures, however, practical applications require fast operation. Here, we demonstrate fast, gate-based switching of an Al nanowire-based superconducting switch…
Superconducting diodes enable dissipationless directional transport, yet achieving electrical tunability and scalability remains a major challenge for circuit-level integration. Here, we demonstrate an electrothermal-switch superconducting…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
Semiconductor nanowires are the building blocks of many nanoscale electrical and neuromorphic circuits. Here, we demonstrate a simple arrangement wherein an ethanol-adsorbed ZnO single nanowire, deposited between gold electrodes using…
Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect…
We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…
We have fabricated crystalline nanowires of VO_2 using a new synthetic method. A nanowire synthesized at 650^oC shows the semiconducting behavior and a nanowire at 670^oC exhibits the first-order metal-insulator transition which is not the…
Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…
We demonstrate a silicon-based high frequency nanomechanical device capable of switching controllably between two states at room temperature. The device uses a nanomechanical resonator with two distinct states in the hysteretic nonlinear…
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible…
The inherent stochasticity in many nano-scale devices makes them prospective candidates for low-power computations. Such devices have been demonstrated to exhibit probabilistic switching between two stable states to achieve stochastic…
Nanoscale electronic devices are of great interest for all kinds of applications like switching, energy conversion and sensing. The objective of this chapter, however, is not to discuss specific devices or applications. Rather it is to…
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to…
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor…
The strong coupling between electronic transport in a single-level quantum dot and a capacitively coupled nano-mechanical oscillator may lead to a transition towards a mechanically-bistable and blocked-current state. Its observation is at…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
Nanomechanical systems offer a versatile platform for both fundamental science and industrial applications. Resonating vibration has been demonstrated to enable an ultrasensitive detection of various physical quantities, with emerging…