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Flax fibres are valuable reinforcements for tomorrow's composites. However, defects called kink-bands, which mainly appear on fibres during the extraction and transformation phases, might affect their mechanical properties. Defects induced…

Here, we evaluate multislice electron ptychography as a tool to carry out depth-resolved atomic resolution characterization of point defects, using silicon carbide as a case study. Through multislice electron scattering simulations and…

Materials Science · Physics 2025-05-15 Aaditya Bhat , Colin Gilgenbach , Junghwa Kim , Michael Xu , Menglin Zhu , James M. LeBeau

We report the density-functional calculations that systematically clarify the stable forms of carbon-related defects and their energy levels in amorphous SiO$_2$ using the melt-quench technique in molecular dynamics. Considering the…

Materials Science · Physics 2018-12-03 Yu-ichiro Matsushita , Atsushi Oshiyama

Pressure-induced phase transformation occurs during silicon (Si) wafering processes. \b{eta}-tin (Si-II) phase is formed at high pressures, followed by the transformation to Si-XII, Si-III or/and amorphous Si ({\alpha}-Si) phases during the…

Structural defects, particularly grain boundaries, play a crucial role in governing charge transport and the optoelectronic properties of metal halide perovskites, thereby limiting the performance of devices. Solar cells incorporating…

Materials Science · Physics 2026-04-07 Huyen T Pham , Siyu Yan , Zhou Xu , Weilun Li , Sergey Gorelick , Michael B Johnston , Joanne Etheridge

MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently…

Materials Science · Physics 2016-06-13 Xiao Shen , Sarit Dhar , Sokrates T. Pantelides

The fluorescence of silicon clusters is reviewed. Atomic clusters of silicon have been at the focus of research for several decades because of the relevance of size effects for material properties, the importance of silicon in electronics…

Atomic and Molecular Clusters · Physics 2017-09-19 Klaus von Haeften

We present a comprehensive study of the vacancy in bulk silicon in all its charge states from 2+ to 2-, using a supercell approach within plane-wave density-functional theory, and systematically quantify the various contributions to the…

Materials Science · Physics 2015-03-17 Fabiano Corsetti , Arash A. Mostofi

The effect of light soaking (LS) on the properties of hydrogenated amorphous silicon presents many challenging puzzles. Some of them are discussed here, along with their present status. In particular the role of the heterogeneities in LS is…

Materials Science · Physics 2014-03-05 S. C. Agarwal

We carried out a first principles investigation on the microscopic properties of nickel-related defect centers in diamond. Several configurations, involving substitutional and interstitial nickel impurities, have been considered either in…

Materials Science · Physics 2012-08-17 R. Larico , J. F. Justo , W. V. M. Machado , L. V. C. Assali

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air.…

Materials Science · Physics 2007-05-23 Shu-Han Lin , Iris Mack , Noom Pongkrapan , P. Fraundorf

Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly happens through optical excitation and de-excitation, a…

We optimized micro-holes in a thin slab for fast Si photodetectors at wavelength 800-950nm. Lateral modes are shown to be responsible for the effective light trapping. Small disorder and cone hole shapes helped achieve uniform quantum…

The mechanism determining the band alignment of the amorphous/crystalline Si heterostructures is addressed with direct atomistic simulations of the interface performed using a hierarchical combination of various computational schemes…

Materials Science · Physics 2016-08-31 Maria Peressi , Luciano Colombo , Stefano de Gironcoli

In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure…

Mesoscale and Nanoscale Physics · Physics 2017-02-23 P. C. Spruijtenburg , S. V. Amitonov , F. Mueller , W. G. van der Wiel , F. A. Zwanenburg

Adhesion plays a pivotal role in computer chip manufacturing, directly affecting the precision and durability of positioning components such as wafer stages. Electrical biasing is widely employed to eliminate floating potential and to…

Soft Condensed Matter · Physics 2025-08-26 Tunç Çiftçi , Jonathon Cottom , Rachid Hahury , Emilia Olsson , Bart Weber

The bulk displacement damage in the detector, produces effects at the device level that limits the long time utilisation of detectors as position sensitive devices and thus the lifetime of detector systems. So, the prediction of time…

Instrumentation and Detectors · Physics 2007-05-23 Sorina Lazanu , Ionel Lazanu

Theoretical and experimental evidence of light driven structuring of glasses is presented. We show that light overcomes Coulomb repulsion and effective electron-electron interaction in glasses under strong light pumping becomes attractive.…

Optics · Physics 2009-11-11 B. P. Antonyuk , A. Z. Obidin , K. E. Lapshin

A comparative experimental and theoretical investigation is presented that centres on the effects of structuring black silicon surfaces with linearly, circularly and azimuthally polarized laser pulses under SF6 ambient atmosphere. It is…

There exists an enormous interest for the study of very high energy domain in particle physics, both theoretically and experimentally, in the aim to construct a general theory of the fundamental constituents of matter and of their…

Instrumentation and Detectors · Physics 2007-05-23 I. Lazanu , S. Lazanu