Related papers: Low voltage control of ferromagnetism in a semicon…
Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…
We demonstrate that the magnetization in magnetic semiconductors exhibits nutational motion when subjected to an external magnetic field. This behavior originates from the splitting of the conduction-electron band which induces anisotropic,…
Employing electron spin instead of charge to develop spintronic devices holds the merits of low-power consumption in information technologies. Meanwhile, the demand for increasing speed in spintronics beyond current CMOS technology has…
Altermagnets host chirally split magnons that promise unique functionalities for information processing. However, their distinctive transport signatures, crucial for experimental identification and manipulation, remain elusive. Here, we…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
In magnetic memory and logic devices, a magnet's magnetization is usually flipped with a spin polarized current delivering a spin transfer torque (STT). This mode of switching consumes too much energy and considerable energy saving can…
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…
Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the…
Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge…
Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
Recent studies have shown that nonlinear magnetization dynamics excited in nanostructured ferromagnets are applicable to brain-inspired computing such as physical reservoir computing. The previous works have utilized the magnetization…
Electric field-induced magnetization switching in multiferroics holds profound promise for ultra-low-energy computing in beyond Moore's law era. Bistable nanomagnets in the multiferroics are usually deemed to be suitable for storing a…
Electric field control of the magnetic state in ferrimagnets holds great promise for developing spintronic devices due to low power consumption. Here, we demonstrate a non-volatile reversal of perpendicular net magnetization in a…
To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic or molecular quantum dot who's localized states are non-spin-degenerate and…
The interplay between spin, charge, and orbital degrees of freedom has led to the development of spintronic devices like spin-torque oscillators, spin-logic devices, and spin-transfer torque magnetic random-access memories. In this…
We report the study of quasi-ballistic electron transport in short FETs subjected to magnetic field. Spatial distributions of electron concentrations, velocities, Hall currents and voltages in the short FET channels are determined. The…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…