Related papers: Low voltage control of ferromagnetism in a semicon…
A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlled with a gate voltage is considered. We show that a single conduction band electron is able to induce a spontaneous collective magnetization…
Electrical control of spin polarization is very desirable in spintronics, since electric field can be easily applied locally in contrast with magnetic field. Here, we propose a new concept of bipolar magnetic semiconductor (BMS) in which…
We investigate quantum coherence of electron spin transported through a semiconductor spintronic device, where spins are envisaged to be controlled by electrical means via spin-orbit interactions. To quantify the degree of spin coherence,…
Magnets are used in electronics to store and read information. A magnetic moment is rotated to a desired direction, so that information can later be retrieved by reading this orientation. Controlling the moment via electric currents causes…
The electron transport properties of hybrid ferromagnetic|normal metal structures such as multilayers and spin valves depend on the relative orientation of the magnetization direction of the ferromagnetic elements. Whereas the contrast in…
The spin and charge transport in materials with spin-dependent conductivity has been studied. It was shown that there is a charge accumulation along spin diffusion in a ferromagnetic metal, which causes a shortening of the spin diffusion…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relatively low temperatures. We show that spin polarization of…
The large spin orbit interaction in rare earth atoms implies a strong coupling between their charge and spin degrees of freedom. We formulate the coupling between voltage and the local magnetic moments of rare earth atoms with partially…
The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is…
Development of future sensor, memory, and computing nanodevices based on novel physical concepts is one of the significant research endeavors in solid-state research. The field of spintronics is one such promising area of nanoelectronics…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the…
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (~THz) and higher packing density due to the absence of any…
Spintronics, a transformative field of research, leverages the spin of electron to revolutionize electronic devices, offering significant advantages over traditional charge-based systems. This chapter highlights the critical role of novel…
Spintronics is postulated on the possibility to employ the magnetic degree of freedom of electrons for computation and couple it to charges. In this view, the combination of the high-frequency of spin manipulations offered by…
The discovery of materials that simultaneously host different phases of matter has often initially confounded, but ultimately enhanced, our basic understanding of the coexisting types of order. The associated intellectual challenges,…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal…
We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…