Related papers: Electric Field Control of the LaAlO$_{3}$/SrTiO$_{…
We examine the enhancement of the interfacial superconductivity between LaAlO$_{3}$ and SrTiO$_{3}$ by an effective electric field. Through the breaking of inversion symmetry at the interface, we show that a term coupling the superfluid…
We report the observation of a magnetic field assisted transient superconducting state in the two dimensional electron gas existing at the interface of LaAlO$_3$/SrTiO$_3$ heterostructures. This metastable state depends critically on the…
A two dimensional electronic system with novel electronic properties forms at the interface between the insulators LaAlO$_3$ and SrTiO$_3$. Samples fabricated until now have been found to be either magnetic or superconducting, depending on…
We report on an extraordinary field effect of the superconducting LaAlO3/KTaO3(111) interface with Tc ~2 K. By applying a gate voltage (VG) across KTaO3, the interface can be continuously tuned from superconducting into insulating states,…
The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and…
Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO_3 / SrTiO_3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using…
Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both…
SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually…
A superconducting phase with an extremely low carrier density of the order of 10^13 cm^-2 is present at LaAlO3-SrTiO3 interfaces. If depleted from charge carriers by means of a gate field, this superconducting phase undergoes a transition…
Controlling the coupling between localized spins and itinerant electrons can lead to exotic magnetic states. A novel system featuring local magnetic moments and extended 2D electrons is the interface between LaAlO3 and SrTiO3. The magnetism…
The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial…
We present a study of the magnetic field tuned superconductor-to-insulator transition (SIT) in the electron gas that forms at the LaAlO$_3$/SrTiO$_3$ interface. We find that the magnetic field induces a transition into a weakly insulating…
Several experiments reveal the inhomogeneous character of the superconducting state that occurs when the carrier density of the two-dimensional electron gas formed at the LaXO3/SrTiO3 (X=Al or Ti) interface is tuned above a threshold value…
We search for the deep origin of the field-induced superconductor-to-insulator transitions observed experimentally in electron-doped SrTiO$_{3}$/LaAlO$_{3}$ interfaces, which were analyzed theoretically very recently within the framework of…
LaAlO3 and SrTiO3 are insulating, nonmagnetic oxides, yet the interface between them exhibits a two-dimensional electron system with high electron mobility,1 superconductivity at low temperatures,2-6 and electric-field-tuned metal-insulator…
Ferromagnetism and superconductivity are in most cases adverse. However, recent experiments reveal that they coexist at interfaces of LaAlO3 and SrTiO3. We analyze the magnetic state within density functional theory and provide evidence…
We report on the discovery and transport study of the superconducting ground state present at the (111)LaAlO$_3$/SrTiO$_3$ interface. The superconducting transition is consistent with a Berezinskii-Kosterlitz-Thouless transition and its 2D…
The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the…
The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and…
At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report…