Related papers: Optically monitored nuclear spin dynamics in indiv…
We demonstrate coherent optical control of a single hole spin confined to an InAs/GaAs quantum dot. A superposition of hole spin states is created by fast (10-100 ps) dissociation of a spin-polarized electron-hole pair. Full control of the…
A spin-photon interface should operate with both coherent photons and a coherent spin to enable cluster-state generation and entanglement distribution. In high-quality devices, self-assembled GaAs quantum dots are near-perfect emitters of…
We report on the direct measurement of the electron spin splitting and the accompanying nuclear Overhauser (OH) field, and thus the underlying nuclear spin polarization (NSP) and fluctuation bandwidth, in a single InAs quantum dot under…
We have studied hyperfine interactions between spin-polarized electrons and lattice nuclei in Al_0.1Ga_0.9As/GaAs quantum well (QW) heterostructures. The spin-polarized electrons are electrically injected into the semiconductor…
Optical pump-probe techniques are used to generate and measure electron spin polarization in a gallium arsenide epilayer in which the electron spin coherence time exceeds the mode-locked laser repetition period. Resonant spin amplification…
The ability to discriminate between simultaneously occurring noise sources in the local environment of semiconductor InGaAs quantum dots, such as electric and magnetic field fluctuations, is key to understanding their respective dynamics…
Experimental investigation of nuclear spin effects on the electron spin polarization in singly negatively charged InP quantum dots is reported. Pump-probe photoluminescence measurements of electron spin relaxation in the microsecond…
Electron spins in GaAs quantum dots have been used to make qubits with high-fidelity gating and long coherence time, necessary ingredients in solid-state quantum computing. The quantum dots can also host photon qubits with energy applicable…
We study the spin dynamics in charged quantum dots in the situation where the resident electron is coupled to only about 200 nuclear spins and where the electron spin splitting induced by the Overhauser field does not exceed markedly the…
We demonstrate bias control of the hyperfine coupling between a single electron in an InAs quantum dot and the surrounding nuclear spins monitored through the positively charged exciton X+ emission. In applied longitudinal magnetic fields…
Similar to nitrogen-vacancy centers in diamond and impurity atoms in silicon, interstitial gallium deep paramagnetic centers in GaAsN have been proven to have useful characteristics for the development of spintronic devices. Among other…
We report the fabrication and photoluminescence properties of laterally-coupled GaAs/AlGaAs quantum dots. The coupling in the quantum dot molecules is tuned by an external electric field. An intricate behavior, consisting of spectral line…
Compared to electrons, holes in InAs quantum dots have a significantly weaker hyperfine interaction that leads to less dephasing from nuclear spins. Thus many recent studies have suggested that nuclear spins are unimportant for hole spin…
We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular…
We present a technique for manipulating the nuclear spins and the emission polarization from a single optically active quantum dot. When the quantum dot is tunnel coupled to a Fermi sea, we have discovered a natural cycle in which an…
Transport through spin-blockaded quantum dots provides a means for electrical control and detection of nuclear spin dynamics in the host material. Although such experiments have become increasingly popular in recent years, interpretation of…
Coherent two-level systems, or qubits, based on electron spins in GaAs quantum dots are strongly coupled to the nuclear spins of the host lattice via the hyperfine interaction. Realizing nuclear spin control would likely improve electron…
We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental…
Hanle effect is ubiquitous in the study of spin-related phenomena and has been used to determine spin lifetime, precession and transport in semiconductors. Here, we report an experimental observation of anomalous Hanle effect in individual…
We study the effect of bias voltage on the nuclear spin polarization of a ballistic wire, which contains electrons and nuclei interacting via hyperfine interaction. In equilibrium, the localized nuclear spins are helically polarized due to…