Related papers: Spin-dependent scattering in a silicon transistor
Skew scattering of electrons induced by a spin cluster is studied theoretically focusing on metals with localized magnetic moments. The scattering probability is calculated by a non-perturbative $T$ matrix method; this method is valid for…
Scattering theory is employed to derive a Landauer-type formula for the spin and the charge currents, through a finite region where spin-orbit interactions are effective. It is shown that the transmission matrix yields the spatial direction…
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the…
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2…
We present a theory for spin relaxation of electrons due to scattering off the central-cell potential of impurities in silicon. Taking into account the multivalley nature of the conduction band and the violation of translation symmetry, the…
Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing.…
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…
We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to…
The electron transmission $T$ is evaluated through waveguides, in which the strength of the spin-orbit interaction(SOI) $\alpha$ is varied periodically, using the transfer-matrix technique. It is shown that $T$ exhibits a {\it…
The dependent scattering effect (DSE), which arises from the wave nature of electromagnetic radiation, is a critical mechanism affecting the radiative properties of micro/nanoscale discrete disordered media (DDM). In the last a few decades,…
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, and distance from the injection point. At low injection…
The nuclear spins of ionized donors in silicon have become an interesting quantum resource due to their very long coherence times. Their perfect isolation, however, comes at a price, since the absence of the donor electron makes the nuclear…
To probe the charge scattering mechanism in Cd$_{3}$As$_{2}$ single crystal, we have analyzed the temperature and magnetic field dependence of the Seebeck coefficient ($S$). The large saturation value of $S$ at high field clearly…
We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering…
We study all of the leading-order contributions to spin relaxation of \textit{conduction} electrons in silicon due to the electron-phonon interaction. Using group theory, $k\cdot p$ perturbation method and rigid-ion model, we derive an…
Elastic scattering of antiprotons on deuteron and 3He targets is studied within the Glauber-Sitenko theory. In case of pbar-d scattering, the single- and double pbar-N scattering mechanisms and the full spin dependence of the elementary…
Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the…
Scattering of electrons by localized spins is the ultimate process enabling electrical detection and control of the magnetic state of a spin-doped material. At the molecular scale, this scattering is mediated by the electronic orbitals…
Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…