Related papers: Electron mobility in silicon nanowires
We report on detailed room temperature and low temperature transport properties of double-gate Si MOSFETs with the Si well thickness in the range 7-17 nm. The devices were fabricated on silicon-on-insulator wafers utilizing wafer bonding,…
We present a first-principles calculation of the electronic conduction properties of single-row sodium nanowires suspended between semi-infinite electrodes. The conductance of the nanowire is ~1 G0 (=2e^2/h) and oscillates with a two-atom…
Experimental studies on two-dimensional (2D) materials are still in the early stages, and most of the theoretical studies performed to screen these materials are limited to the room-temperature carrier-mobility in the free standing 2D…
We calculate the current-voltage characteristic of metallic nanotubes at high bias voltage showing that a bottleneck exists for short nanotubes in contrast to large ones. We attribute this to a redistribution of lower-lying acoustic phonons…
We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional…
Understanding phonon transport mechanisms in nanostructures is of great importance for delicately tailoring thermal properties. Combining phonon particle and wave effects through different strategies, previous studies have obtained…
Electronic and thermal transport properties in two-dimensional (2D) semiconductors have been extensively investigated due to their potential to miniaturize transistors. Microscopically, electron-phonon interactions are considered the…
We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the semi-classical Monte Carlo approach to model spin evolution…
Coupling of two dielectric wires with rectangular cross-section gives rise to bonding and anti-bonding resonances. The latter is featured by extremal narrowing of the resonant width for variation of the aspect ratio of the cross-section and…
We review experimental and theoretical results on thermal transport in semiconductor nanostructures (multilayer thin films, core/shell and segmented nanowires), single- and few-layer graphene, hexagonal boron nitride, molybdenum disulfide…
We present density functional theory calculations of the phonon-limited mobility in n-type monolayer graphene, silicene and MoS$_2$. The material properties, including the electron-phonon interaction, are calculated from first-principles.…
In this letter, we theoretically study the electron mobility in few-layer MoxW1-xS2 as limited by various scattering mechanisms. The room temperature energy-dependent scattering times corresponding to polar longitudinal optical (LO) phonon,…
Introducing hierarchical disorder from multiple defects into materials through nanostructuring is one of the most promising directions to achieve extremely low thermal conductivities and thus improve thermoelectric performance. The success…
By combining density functional theory and nonequilibrium Green's function, we study the electronic and transport properties of monolayer black phosphorus nanoribbons (PNRs). First, we investigate the band-gap of PNRs and its modulation by…
Carbon nanofibres (CNF) were dispersed into an epoxy resin using a combination of ultrasonication and mechanical mixing. The electronic transport properties of the resulting composites were investigated by means of impedance spectroscopy.…
Electron conduction through quasi-one-dimensional (1D) indium atomic wires on silicon (the Si(111)-4x1-In reconstruction) is clarified with the help of local structural analysis using scanning tunneling microscopy. The reconstruction has a…
We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…
We have investigated the effect of twisting on electronic band structure, effective mass and carrier mobilities of three prototypes of AGNRs (N=6, 7 & 8) using Density functional theory combined with Deformation potential theory and…
We demonstrate the key role of phonon occupation in limiting the high-field ballistic transport in metallic carbon nanotubes. In particular, we provide a simple analytic formula for the electron transport scattering length, that we validate…