Related papers: Selective epitaxial growth of graphene on SiC
The unique electronic properties of graphene offer the possibility that it could replace silicon when microelectronics evolves to nanoelectronics. Graphene grown epitaxially on silicon carbide is particularly attractive in this regard…
Re-using the substrate is identified as a method for reducing the cost of high efficiency III-V solar cells. The approach investigated here consists in inserting a graphene layer onto a (001)GaAs substrate prior to the epitaxial growth of…
The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor light extraction efficiency (LEE). To improve the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs…
Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circular holes). A new process has been developed to improve the…
The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot…
The growth of high-quality Bernal-stacked bilayer graphene (BLG) directly on dielectric substrates is crucial for electronic and optoelectronic applications, but there are still challenges such as poor quality, uncontrollable thickness and…
We propose a table-top method to obtain bilayer quasi-free-standing epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the buffer layer is decoupled…
Graphene has attracted great attentions since its first discovery in 2004. Various approaches have been proposed to control its physical and electronic properties. Here, we report that graphene based intercalation compounds is an efficient…
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The…
With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial…
The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related…
We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a…
Low temperature epitaxial breakdown of inhomogeneously strained Si capping layers is investigated. By growing Si films on coherently strained GeSi quantum dot surfaces, we differentiate effects of surface roughness, strain, and growth…
The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which…
We study the vibrational, magnetic and transport properties of Few Layer Graphene (FLG) using Raman and electron spin resonance spectroscopy and microwave conductivity measurements. FLG samples were produced using wet chemical exfoliation…
Grazing incidence X-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a $6(\sqrt{3}\times\sqrt{3})$R30$^\circ$ periodicity, a monolayer graphene (MLG)…
The current method of growing large-area graphene on Cu surfaces (polycrystalline foils and thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly…
Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural control at the monolayer limit. Here, we demonstrate…
Naturally or artificially stacking extra layers on single layer graphene (SLG) forms few-layer graphene (FLG), which has attracted tremendous attention owing to its exceptional properties inherited from SLG and new features generated by…
Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by…