Related papers: Photoluminescence from localized states in disorde…
We study the theory of intrinsic photoluminescence of two-dimensional electron systems in the vicinity of the $\nu=1$ quantum Hall state. We focus predominantly on the recombination of a band of initial ``excitonic states'' that are the…
Time-resolved photoluminescence (PL) and micro-PL imaging were used to study single CdS nanowires at 10 K. The low-temperature PL of all CdS nanowires exhibit spectral features near energies associated with free and bound exciton…
Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function of in-situ and ex-situ 63 MeV proton irradiation to assess…
The temperature dependence of the complex optical properties of the layered phosphide material EuCd$_2$P$_2$ have been measured over a wide frequency range above and below $T_{\rm N} \simeq 11.5$ K for light polarized in the $a-b$ planes.…
We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band…
Optical and magneto-optical properties of ZnMnO films grown at low temperature by Atomic Layer Deposition are discussed. A strong polarization of excitonic photoluminescence is reported, surprisingly observed without splitting or spectral…
We report on the theoretical photoluminescence spectrum of the interacting two-dimensional electron gas at filling factor one (\nu=1). We considered a model similar to the one adopted to study the X-ray spectra of metals and solved it…
We report on temperature- and excitation-power-dependent photoluminescence (PL) study of CuInS$_{2}$/ZnS nanocrystals dispersed on a SiO$_{2}$/Si substrate with a confocal micro-PL system. With increasing the excitation power at 22 K and…
The present paper deals with the results of a research work on the optical properties of colloidal InP/ZnS nanocrystals stabilized with a heterobifunctional polyvinylpyrrolidone polymer. We have analyzed the absorption and photoluminescence…
We report on time-resolved and steady-state photoluminescence studies of GaAs/AlGaAs V-groove quantum wire structures. Steady-state photoluminescence experiments are performed in the temperature range from 8K to 200K. We evaluate the…
We theoretically analyze the carrier capture and distribution among the available energy levels of a symmetric semiconductor quantum dot under continuous-wave excitation resonant with the barrier energy levels. At low temperature all the…
Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of…
BaMnF$_4$ microsheets have been prepared by hydrothermal method. Strong room-temperature blue-violet photoluminescence has been observed (absolute luminescence quantum yield 67%), with two peaks located at 385 nm and 410 nm, respectively.…
The measurement of the photon number distribution (PND) allows one to extract metrics of non-classicality of fundamental and technological relevance, but in principle it requires the use of detectors with photon number resolving (PNR)…
Raman and Photoluminescence (PL) experiments on correlated metallic La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ have been carried out using different excitation wavelengths as a function of temperature from 15 K to 300 K. Our data suggest a Raman mode…
Time-resolved transmittance measurements performed on Ga$_{0.94}$Mn$_{0.06}$As in the vicinity of the Mn-induced mid-infrared absorption band are presented. Upon photo-excitation, a slow increase (hundreds of ps timescale) of the…
We report on the experimental observation of reduced light energy transport and disorder-induced localization close to a boundary of a truncated one-dimensional (1D) disordered photonic lattice. Our observations uncover that near the…
We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an…
At cryogenic temperatures, the photoluminescence spectrum of monolayer WSe2features a num-ber of lines related to the recombination of so-called localized excitons. The intensity of these lines strongly decreases with increasing…
The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been…