Related papers: Photoluminescence from localized states in disorde…
The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from…
The photoluminescence (PL) in monolayer transition metal dichalcogenides (TMDs) is dominated by recombination of electrons in the conduction band with holes in the spin-orbit split valence bands, and there are two distinct emission features…
We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We…
The demand for single photon sources at $\lambda~=~1.54~\mu$m, which follows from the consistent development of quantum networks based on commercial optical fibers, makes Er:O$_x$ centers in Si still a viable resource thanks to the optical…
We investigate resonant photoluminescence arising from incompressible quantum liquids formed in two-dimensional electron systems. We demonstrate that, for excitons composed of a photoexcited electron occupying the upper spin sublevel of the…
Indium (III) selenide is currently one of the most actively studied materials in the two-dimensional family due to its remarkable ferroelectric and optical properties. This study focuses on the luminescent properties of few-layer…
A better understanding of the optical properties of a device structure characterized by a random arrangement of materials with different dielectric properties at a length scale comparable to the wavelength of light is crucial for the…
We report on the photoluminescence (PL) properties of MgZnO/ZnO heterojunctions grown by plasma-assisted molecular-beam epitaxy. Influence of the applied magnetic field (B) on the radiative recombination of the two-dimensional electron gas…
Recent \textit{ab initio} calculations predict 1D dispersive electronic bands confined to the atomic scale cores of dislocations in the wide bandgap (3.84 eV) semiconductor ZnS. We test these predictions by correlating sub-bandgap optical…
The fine structure of the exciton spectrum, containing optically allowed (bright) and forbidden (dark) exciton states, determines the radiation efficiency in nanostructures. We study time-resolved micro-photoluminescence in MoS$_2$…
We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed,…
Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the transmitted luminescence were enabled by the partial…
We report emergence of photoluminescence at room temperature in trigonal $Cs_3Bi_2Br_9$ at high pressures. Enhancement in intensity with pressure is found to be driven by increase in distortion of $BiBr_6$ octahedra and iso-structural…
We demonstrate single-photon counting at 1550 nm with titanium-nitride (TiN) microwave kinetic inductance detectors. Energy resolution of 0.4 eV and arrival-time resolution of 1.2 microseconds are achieved. 0-, 1-, 2-photon events are…
Time-resolved multi-terahertz (THz) spectroscopy is used to observe pump fluence-dependent dynamics in the optical conductivity of photoexcited tin selenide (SnSe) over an ultrabroadband spectral range of 0.5 - 11 THz at fluences from 0.1 -…
Photons excited into ground state modes at finite temperature display partitioning among photon phases, lifetimes and distances travelled since creation. These distributions set the distance from an interface a created photon has some…
The time-resolved photoluminescence (PL) characteristics of single CdSe/ZnS nanoparticles, embedded in a PMMA layer is studied at room temperature. We observe a strong spectral jitter of up to 55 meV, which is correlated with a change in…
We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL…
Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we…
Two-dimensional (2D) materials have attracted considerable attention due to their unique physicochemical properties and significant potential in energy-related applications. Polymeric carbon nitrides (PCNs) with 2D stacked architecture show…