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Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…

The proven radiation hardness of silicon 3D devices up to fluences of $1 {\times} 10^{17}$ $n_{eq}/cm^{2}$ makes them an excellent choice for next generation trackers, providing < 10 ${\mu}m$ position resolution at a high multiplicity…

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation.…

The Chinese large-area violet-light-sensitive silicon photodiode PIN is one of the candidates of the lead tungstate crystal detector readout component of the photon spectrometer in the large heavy ion collision experiment. The PIN diode was…

Highly granular pixel detectors allow for increasingly precise measurements of charged particle tracks. Next-generation detectors require that pixel sizes will be further reduced, leading to unprecedented data rates exceeding those foreseen…

To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the…

The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex…

Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high…

The CLEO III detector has recently commenced data taking at the Cornell electron Storage Ring (CESR). One important component of this detector is a 4 layer double-sided silicon tracker with 93% solid angle coverage. This detector ranges in…

The Pixel 2010 conference focused on semiconductor pixel detectors for particle tracking/vertexing as well as for imaging, in particular for synchrotron light sources and XFELs. The big LHC hybrid pixel detectors have impressively started…

Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…

Vertex detectors at future hadron colliders will need to cope with large particle fluences. Diamond is a particularly radiation hard material and exhibits further properties that makes it an attractive material for such detectors. Within…

A novel modular high-resolution charged-particle tracking detector design using $250\mu m$ diameter, round, scintillating fibers and SiPM arrays for readout is presented. The fiber modules consist of 8 layers of 128 fibers, mechanically sta…

This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the…

Combining gaseous detectors with a high-granularity pixelated charge readout enables experimental applications which otherwise could not be achieved. This includes high-resolution tracking of low-energetic particles, requiring ultra-low…

Soft X-ray experiments at synchrotron light sources are essential for a wide range of research fields. However, commercially available detectors for this energy range often cannot deliver the necessary combination of quantum efficiency,…

Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the…

The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. One such detector is the ALICE ITS3 that aims to be very light at 0.07% X/X$_{0}$ per layer and have a low power consumption…

The silicon pixel vertex detector is a key element of the BTeV spectrometer. Sensors bump-bonded to prototype front-end devices were tested in a high energy pion beam at Fermilab. The spatial resolution and occupancies as a function of the…

DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…