Related papers: Electron drift velocity control in GaAs-in-Al2O3 q…
In this paper the scattering rates of electrons in thin free standing GaAs quantum wires in the electric quantum limit are calculated self-consistently taking into account the collisional broadening caused by scattering processes. The…
Transport properties of narrow two-dimensional conducting wires in which the electron scattering is caused by side edges' roughness have been studied. The method for calculating dynamic characteristics of such conductors is proposed which…
In this work, we investigate the effects of a controlled conical geometry on the electric charge transport through a two-dimensional quantum ring weakly coupled to both the emitter and the collector. These mesoscopic systems are known for…
The effects of very low temperature on the electron transport in a [110] and [100] axially aligned unstrained silicon nanowires (SiNWs) are investigated. A combination of semi-empirical 10-orbital tight-binding method, density functional…
The magnetotransport in a set of identical parallel AlGaN/GaN quantum wire structures was investigated. The width of the wires was ranging between 1110 nm and 340 nm. For all sets of wires clear Shubnikov--de Haas oscillations are observed.…
We have theoretically investigated the influence of interface roughness scattering on the low temperature mobility of electrons in quantum wires when electrons fill one or many subbands. We find the Drude conductance of the wire with length…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are…
We investigate the effects of electron and acoustic-phonon confinement on the low-field electron mobility of thin square silicon nanowires (SiNWs) that are surrounded by SiO$_2$ and gated. We employ a self-consistent…
We study the conductance of a quantum wire in the presence of weak electron-electron scattering. In a sufficiently long wire the scattering leads to full equilibration of the electron distribution function in the frame moving with the…
In this study, we present our experimental investigation on the magnetotransport properties of a two-dimensional electron system in GaAs quantum wells utilizing a variety of device geometries, including obstacles with thin barriers and…
We explore electron transport properties in a quantum wire attached to two metallic electrodes. A simple tight-binding model is used to describe the system and the coupling of the wire to the electrodes (source and drain) is treated through…
An approach to calculation of the ionized impurity and surface roughness scattering rates of electrons in very thin semiconductor quantum wires taking into account the energy level broadening is worked out. It is assumed that all the…
We measure electron transport through point contacts in an electron gas in AlGaAs/GaAs heterostructures and graphene for a range of temperatures, magnetic fields and electron densities. We find a magnetoconductance peak around B = 0. With…
Electron transport in thin metallic wires and films is strongly influenced by the quality of their surface. Weak localization and magnetoconductivity are also sensitive to the electron scattering at the edges of the sample. We study weak…
We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To…
Nonlinear electron transport in normally pinched-off quantum wires was studied. The wires were fabricated from AlGaAs/GaAs heterostructures with high-mobility two-dimensional electron gas by electron beam lithography and following wet…
We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of…
Motivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells [Y. J. Chung \textit{et al.}, Nature Materials \textbf{20}, 632 (2021)], we examine contributions to mobility and quantum mobility from various…
Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift…