Related papers: Direct imaging of the structural change generated …
We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data…
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…
Scanning tunneling microscopy (STM) provides real-space electronic state information at the atomic scale that is most commonly used to study materials surfaces. An intriguing extension of the method is attempt to study the electronic…
Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power…
Interest in magnetic-tunnel junctions has prompted a re-examination of tunneling measurements through thin insulating films. In any study of metal-insulator-metal trilayers, one tries to eliminate the possibility of pinholes (small areas…
Using low-temperature scanning laser microscopy we directly image electric transport in a magnetoresistive element, a manganite thin film intersected by a grain boundary (GB). Imaging at variable temperature allows reconstruction and…
Tunneling between two parallel, two-dimensional electron gases (2DEGs) in a complex oxide heterostructure containing a large, mobile electron density of ~ 3x10^14 cm^-2 is used to probe the subband structure of the 2DEGs.…
We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite…
Magnetic tunnel junctions are nanoscale spintronic devices with microwave generation and detection capabilities. Here we use the rectification effect called "spin-diode" in a magnetic tunnel junction to wirelessly detect the microwave…
We compute the shot noise in ballistic and disordered Fe/MgO/Fe tunnel junctions by a wave function-matching method. For tunnel barriers with no more than 5 atomic layers we find a suppression of the Fano factor as a function of the…
We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing…
We found a strong influence of the composition of the magnetic material on the temperature dependence of the tunneling magneto-Seebeck effect in $MgO$ based tunnel junctions. We use \textit{ab initio} alloy theory to consider different…
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed,…
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…
Experiments on hybrid superconducting normal-metal structures have revealed that even in the absence of tunnel junctions the onset of superconductivity can lead to a decrease in the electrical conductance by an amount many orders of…
An electrical current that flows across individual atoms can generate exotic quantum transport signatures in model junctions built using atomic tip or lateral techniques. So far, however, a viable industrial pathway for atom-driven devices…
Josephson junctions are the key components used in superconducting qubits for quantum computing. The advancement of quantum computing is limited by a lack of stability and reproducibility of qubits which ultimately originates in the…
We report measurements of the electron transport through atomic-scale constrictions and tunnel junctions between ferromagnetic electrodes. Structures are fabricated using a combination of e-beam lithography and controlled electromigration.…
In this work we have analysed the deterimental effect on conductance caused by diffusion of hydrogen atoms in interstitial voids during fabrication process of magnesium oxide barrier of an Fe MgO Fe magnetic tunnel junction, using first…