Related papers: Threshold fields for antiparallel ferroelectric do…
Atomic force microscopy was used to investigate ferroelectric switching and nanoscale domain dynamics in epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of the writing time dependence of domain size reveal a two-step process in which…
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…
The structure of a single antiparallel ferroelectric domain wall in LiNbO3 is quantitatively mapped by piezoelectric force microscopy (PFM) with calibrated probe geometry. The PFM measurements are performed for 49 probes with the radius…
Optimizing ferroelectrics for contemporary high-frequency applications asks for the fundamental understanding of ferroelectric switching and domain wall (DW) motion in ultrafast field pulses while the microscopic understanding of the latter…
Movements of individual domain walls in a ferromagnetic garnet were studied with angstrom resolution. The measurements reveal that domain walls can be locked between adjacent crystallographic planes and propagate by distinct steps matching…
While negative capacitance has been demonstrated in ferroelectric-dielectric heterostructures in the form of capacitance enhancement, all experimental evidence, to date, suggests the existence of domains therein. Here, we address the…
Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able…
Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO3 thin film by an above-bandgap ultrafast optical…
We report a study on the field-driven propagation of vortex-like domain walls in ferromagnetic nanotubes. This particular geometry gives rise to a special feature of the static wall configuration, which significantly influences its…
We report on extensive domain wall motion in ferroelectric nanocapacitor arrays investigated by piezoresponse force microscopy. Under a much longer or higher bias voltage pulse, compared to typical switching pulse conditions, domain walls…
Phase field modeling of domain structures in ferroelectrics nanorods of different shape and sizes is presented. The vortex domain configurations in confined ferroelectrics have been explored by varying the ratio of the energies of…
Electron transport limited by the rotating exchange-potential of domain walls is calculated in the ballistic limit for the itinerant ferromagnets Fe, Co, and Ni. When realistic band structures are used, the domain wall magnetoresistance is…
Ferroelectric domain wall motion is fundamental to the switching properties of ferroelectric devices and is influenced by a wide range of factors including spatial disorder within the material and thermal noise. We build a…
The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood. In this work, by using the phase field simulation, we have studied the polarization switching property of…
Magnetic domain walls have been studied in micrometer-sized Fe20Ni80 elements containing geometrical constrictions by spin-polarized scanning electron microscopy and numerical simulations. By controlling the constriction dimensions, the…
An antiferromagnetic domain wall in a thermal gradient is found to experience a force towards colder regions upon the application of a uniform magnetic field along the easy axis. This force increases with the strength of the applied field…
Quantum tunneling of domain walls out of an impurity potential in a mesoscopic ferromagnetic sample is investigated. Using improved expressions for the domain wall mass and for the pinning potential, we find that the cross-over temperature…
The dynamics of a multiferroic domain wall in which an electric field can couple to the magnetization via inhomogeneous magnetoelectric interaction is investigated by the collective-coordinate framework. We show how the electric field is…
Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of…
Magnetic nanowires supporting field- and current-driven domain wall motion are envisioned for new methods of information storage and processing. A major obstacle for their practical use is the domainwall velocity, which is traditionally…