Related papers: Coulomb oscillations in three-layer graphene nanos…
We report electronic measurements on high-quality graphene nanoconstrictions (GNCs) fabricated in a transmission electron microscope (TEM), and the first measurements on GNC conductance with an accurate measurement of constriction width…
Quantum dots and single-molecule transistors may exhibit level crossings induced by tuning external parameters such as magnetic field or gate voltage. For Coulomb blockaded devices, this shows up as an inelastic cotunneling threshold in the…
Trilayer graphene with a twisted middle layer has recently emerged as a new platform exhibiting correlated phases and superconductivity near its magic angle. A detailed characterization of its electronic structure in the parameter space of…
Probing techniques with spatial resolution have the potential to lead to a better understanding of the microscopic physical processes and to novel routes for manipulating nanostructures. We present scanning-gate images of a graphene quantum…
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…
Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…
Graphene, a 2-dimensional monolayer form of sp2 hybridizated carbon atoms, is attracting increasing attention due to its unique and superior physicochemical properties. Covalently functionalized graphene layers, with their modifiable…
The electronic quality of graphene has improved significantly over the past two decades, revealing novel phenomena. However, even state-of-the-art devices exhibit substantial spatial charge fluctuations originating from charged defects…
An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated…
We report the infrared transmission measurement on electrically gated twisted bilayer graphene. The optical absorption spectrum clearly manifests the dramatic changes such as the splitting of inter-linear-band absorption step, the shift of…
In gapped bilayer graphene, similarly to conventional semiconductors, Coulomb impurities (such as nitrogen donors) may determine the activation energy of its conductivity and provide low temperature hopping conductivity. However, in spite…
We investigate the band structure of twisted monolayer-bilayer graphene (tMBG), or twisted graphene on bilayer graphene (tGBG), as a function of twist angles and perpendicular electric fields in search of optimum conditions for achieving…
Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile…
We calculate the full frequency spectral density of voltage fluctuations in a Single Electron Transistor (SET), used as an electrometer biased above the Coulomb threshold so that the current through the SET is carried by sequential tunnel…
Based on the standard tight-binding model of the graphene $\pi$-band electronic structure, the extended H\"uckel model for the adsorbate and graphene carbon atoms, and spin splittings estimated from density functional theory (DFT), the…
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its…
There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires two gates to create a band gap and tune channel's conductance…
A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel…
The fast electron transport and superior multidirectional flexibility of three-dimensional graphene-based foams (GFs) are pivotal in the realm of stretchable electronics. We observed pre-stretching induced modulation of the…
We suggest a simple model of disorder in graphene assuming that there are randomly distributed positive and negative centers with equal concentration $N/2$ in the bulk of silicon oxide substrate. We show that at zero gate voltage such…