Related papers: $L$-valley electron $g$ factor in bulk GaAs and Al…
In this paper, we consider a one-loop thermal correction to the $g$-factors of the ground and low-lying excited states in neutral alkaline-like atomic systems. As an example, we carried out calculations for Rb and Cs atoms, where optical…
PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large…
We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely geometrical…
A weighted difference of the $g$-factors of the H- and Li-like ions of the same element is theoretically studied and optimized in order to maximize the cancelation of nuclear effects between the two charge states. We show that this weighted…
We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley…
In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and…
We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent…
We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies…
The high-density electron gas in a strong magnetic field B and at zero temperature is investigated. The quantum strong-field limit is considered in which only the lowest Landau level is occupied. It is shown that the perturbation series of…
We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the…
In high-quality solid-state systems at low temperatures, the hydrodynamic or the ballistic regimes of heat and charge transport are realized in the electron and the phonon systems. In these regimes, the thermal and the electric conductance…
We study the effect of electron interaction on the spin-splitting and the $g$-factor in graphene in perpendicular magnetic field using the Hartree and Hubbard approximations within the Thomas-Fermi model. We found that the $g$-factor is…
Hole-spin qubits in planar Ge/SiGe heterostructures have attracted significant attention in recent years owing to their favorable electrical characteristics and prolonged coherence times. However, the strong spin-orbit interaction also…
The fully relativistic theory of the g factor of Li-like ions with nonzero nuclear spin is considered for the (1s)^2 2s state. The magnetic-dipole hyperfine-interaction correction to the atomic g factor is calculated including the…
Applied magnetic fields can couple to atomic displacements via generalized Lorentz forces, which are commonly expressed as gyromagnetic $g$ factors. We develop an efficient first-principles methodology based on density-functional…
The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of…
The aim of the current work is the numerical research of the anisotropic characteristics of the two-dimensional hydrogen atom induced by a magnetic field. The ground state energy (GSE) of the two-dimensional hydrogen atom and the…
We have measured the ground-state $g$-factor of boronlike argon $^{40}\textrm{Ar}^{13+}$ with a fractional uncertainty of \SI{1.4e-9}{} with a single ion in the newly developed ALPHATRAP double Penning-trap setup. The here obtained value of…
Photoluminescence measurements were carried out on Be $\delta$-doped GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure at 1.6 K in magnetic fields ($B$) up to 5 T. Luminescence originating from recombination of a two-dimensional electron gas…
We have calculated the resistivity of a GaAs\slash AlGaAs heterojunction in the presence of both an in--plane magnetic field and a weak perpendicular component using a semiclassical Boltzmann transport theory. These calculations take into…