Related papers: Non-volatile switching in graphene field effect de…
Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current…
Negative differential resistance (NDR) with room temperature peak-valley-ratio of 8 has been observed in a ballistic field-effect-transistor (FET) based on graphene, having an oblique top gate. Graphene FETs with a top gate inclination…
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…
In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough…
One of severe limits of graphene nanoribbons (GNRs) in future applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used in field effect transistors (FETs). In this paper, using tight-binding approach and first principles…
We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations…
We show within a local self-consistent mean-field treatment that a random distribution of magnetic adatoms can open a robust gap in the electronic spectrum of graphene. The electronic gap results from the interplay between the nature of the…
I present a review of both experimental and theoretical studies performed during the recent three years, which deal with the physical properties and possible applications of graphene placed on ferroelectric (organic or Pb(ZrxTi1-x)O3 (PZT)…
In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require…
The conductance of graphene subject to a strong, tilted magnetic field exhibits a dramatic change from insulating to conducting behavior with tilt-angle, regarded as evidence for the transition from a canted antiferromagnetic (CAF) to a…
A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…
We have fabricated a centimeter-size single-layer graphene device, with a gate electrode, which can modulate the transmission of terahertz and infrared waves. Using time-domain terahertz spectroscopy and Fourier-transform infrared…
We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to…
Experimental challenges in identifying various types of magnetic ordering in graphene quantum dots (QDs) pose a major hurdle in the application of these nanostructures for spintronic devices. }Based upon phase diagrams obtained by employing…
Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arrangement hosts correlated and topological electronic phases,…
We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly…
Graphene revealed a number of unique properties beneficial for electronics, including exceptionally high electron mobility and widely tunable Fermi level. However, graphene does not have an electron energy band gap, which presents a serious…
Graphene is a promising candidate for applications in spintronics. In this paper, Density Functional Theory method is used to calculate the band structure and magnetic properties of graphene on Ni(111). Our results show that once there is…
Trilayer graphene exhibits valley-protected gapless states when the stacking order changes from ABC to CBA and a gate voltage is applied to outer layers. Some of these states survive strong distortions of the trilayer. For example, they…