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We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale…
Hexagonal boron nitride is a promising material for many applications ranging from deep UV emission to an ideal substrate for other two dimensional crystals. Although efforts towards the growth of wafer-scale, high quality material strongly…
Photodetectors (PDs) are essential in imaging, communication, and sensing technologies. However, their reliance on external power makes them energy-consuming. This creates a strong need for self-powered PDs as a sustainable alternative. ZnO…
We report a solution-processed, ligand supported synthesis of 15-20 nm thick Sb(2-x)Bi(x)Te3 nanoplatelets. After complete ligand removal by a facile NH3-based etching procedure, the platelets are spark plasma sintered to a p-type…
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates.…
Interests in two-dimensional transition-metal dichalcogenides have prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy. However, growths of monolayer and bilayer WSe2, an…
To advance fundamental understanding, and ultimate application, of transition-metal dichalcogenide (TMD) monolayers, it is essential to develop capabilities for the synthesis of high-quality single-layer samples. Molecular beam epitaxy…
Precise control of morphologies of one-dimensional (1D) or 2D nanostructures during growth has not been easily accessible, usually degrading the device performance and therefore limiting applications to various advanced nanoscale…
The combination of large thickness ($>3$ $\mu$m), large--area uniformity (75 mm diameter), high growth rate (up to 0.4 $\mu$m/min) in assemblies of complex--shaped nanowires on lithographically defined patterns has been achieved for the…
High quality semipolar and nonpolar GaN is crucial in achieving high-performance GaN-based optoelectronic devices, yet it has been very challenging to achieve large-area wafers that are free of basal-plane stacking faults (BSFs). In this…
Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can…
In this study, we report the epitaxial growth of a series of {\alpha}-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualities of the {\alpha}-Sn films are confirmed. An enhanced…
Magnetic topological insulators such as MnBi2Te4 and MnSb2Te4 are promising hosts of novel physical phenomena such as quantum anomalous Hall effect and intrinsic axion insulator state, both potentially important for the implementation in…
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and…
Magnetic doping of 2D materials such as Transition Metal Dichalcogenides is promising for the enhancement of magneto-optical properties, as it was previously observed for 3D diluted magnetic semiconductors. To maximize the effect of…
Freestanding semiconductor nanowires have opened up new possibilities for semiconductor devices, enabling geometries, material combinations and strain states which were not previously possible. Along these lines, spontaneous bending in…
PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with…
Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in…
Fragmentation methods such as the many-body expansion (MBE) are a common strategy to model large systems by partitioning energies into a hierarchy of decreasingly significant contributions. The number of fragments required for chemical…
Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire forms due to its anisotropic atomic structure, which has…