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Spin-polarized current effect is studied on the static and dynamic magnetization of the antiferromagnet in a ferromagnet - antiferromagnet nanojunction. The macrospin approximation is generalized to antiferromagnets. Canted…

Materials Science · Physics 2011-12-13 E. M. Epshtein , Yu. V. Gulyaev , P. E. Zilberman

Controlling spin current and magnetic exchange coupling by applying an electric field and achieving high spin injection efficiency at the same time in a nanostructure coupled to ferromagnetic electrodes have been the outstanding challenges…

Mesoscale and Nanoscale Physics · Physics 2017-09-13 Kamal B Dhungana , Ranjit Pati

Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque…

Materials Science · Physics 2009-11-13 M. Chshiev , I. Theodonis , A. Kalitsov , N. Kioussis , W. H. Butler

The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no…

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 A. Manchon

The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 C. Heide , P. E. Zilberman , R. J. Elliott

A mechanism of current-induced magnetization reversal based on the parametric resonance is described. The source of the magnetization reversal is a current-induced magnetic field, which is applied perpendicularly to the easy axis of…

Mesoscale and Nanoscale Physics · Physics 2021-04-28 Vadym Zayets

Recent studies on magnetization dynamics induced by spin-orbit torque have revealed a weak dependence of the critical current for magnetization switching on the damping constant of a ferromagnetic free layer. This study, however, reveals…

Mesoscale and Nanoscale Physics · Physics 2020-11-12 Tomohiro Taniguchi , Yohei Shiokawa , Tomoyuki Sasaki

The mechanisms of the magnetization switching of magnetic multilayers driven by a current are studied by including exchange interaction between local moments and spin accumulation of conduction electrons. It is found that this exchange…

Materials Science · Physics 2009-11-07 S. Zhang , P. M. Levy , A. Fert

We observe magnetization dynamics induced by spin momentum transfer in the noise spectra of current perpendicular to the plane giant magnetoresistance spin valves. The dynamics are observable only for those combinations of current direction…

Materials Science · Physics 2009-11-10 M. Covington , M. AlHajDarwish , Y. Ding , N. J. Gokemeijer , M. A. Seigler

We study theoretically the dc Josephson tunnel current for a junction of two proximity S/F bilayers of a massive superconductor (S) / a thin ferromagnet (F) separated by an insulating (I) barrier. The dependence of the critical current on…

Superconductivity · Physics 2009-11-07 V. N. Krivoruchko , E. A. Koshina

Recent theories of spin-current-induced magnetization reversal are formulated in terms of a spin-mixing conductance $G^{mix}$. We evaluate $G^{mix}$ from first-principles for a number of (dis)ordered interfaces between magnetic and…

Materials Science · Physics 2009-11-07 K. Xia , P. J. Kelly , G. E. W. Bauer , A. Brataas , I. Turek

Finite-temperature micromagnetics simulations are employed to study the magnetization-switching dynamics driven by a field applied at an angle to the long axis of an iron nanopillar. A bi-modal distribution in the switching times is…

Statistical Mechanics · Physics 2015-05-13 S. H. Thompson , G. Brown , P. A. Rikvold , M. A. Novotny

We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…

Current-induced magnetization excitation is a core phenomenon for next-generation magnetic nanodevices, and has been attributed to the spin-transfer torque (STT) that originates from the transfer of the spin angular momentum between a…

Materials Science · Physics 2016-03-30 K. J. Kim , T. Moriyama , T. Koyama , D. Chiba , S. W. Lee , S. J. Lee , K. J. Lee , H. W. Lee , T. Ono

Spin-orbit torque can drive electrical switching of magnetic layers. Here, we report that at least for micrometer-sized samples there is no simple correlation between the efficiency of dampinglike spin-orbit torque ({\xi}_DL^j) and the…

Materials Science · Physics 2021-03-03 Lijun Zhu , D. C. Ralph , R. A. Buhrman

We study spin-transfer-torque driven magnetization dynamics of a perpendicular magnetic tunnel junction (MTJ) nanopillar. Based on the combination of spin-torque ferromagnetic resonance and microwave spectroscopy techniques, we demonstrate…

Mesoscale and Nanoscale Physics · Physics 2023-04-11 Kaiyuan Zhou , Lina Chen , Kequn Chi , Qingwei Fu , Zui Tao , Like Liang , Zhenyu Gao , Haotian Li , Hao Meng , Bo Liu , Tiejun Zhou , R. H. Liu

Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane…

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a…

Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…

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