Related papers: Studies of Effects of Current on Exchange-Bias: A …
By means of micromagnetic spin dynamics calculations, a quantitative calculation is carried out to explore the mechanism of exchange bias (EB) in ferromagnetic (FM)/compensated antiferromagnetic (AFM) bilayers. The antiferromagnets with low…
Direction-dependent anisotropic exchange is a common feature of magnetic systems with strong spin-orbit coupling. Here we study the effect of such exchange upon macroscopic magnetic anisotropy for a face-centered-cubic model. By several…
The phenomena of exchange anisotropy is well known in terms of static magnetization properties such as enhanced coercivity and magnetization loop shifts. These effects are primarily associated with effective anisotropies introduced into the…
Magnon spin currents in insulating magnets are useful for low-power spintronics. However, in magnets stacked by antiferromagnetic (AFM) exchange coupling, which have recently aroused significant interest for potential applications in…
Spin-polarized current effect is studied on the static and dynamic magnetization of the antiferromagnet in a ferromagnet - antiferromagnet junction. The macrospin approximation is generalized to antiferromagnets. Canted antiferromagnetic…
It is shown that in spin injection experiments the interplay between external magnetic field and alternating current can be observed already on a single ferromagnet/normal metal interface. The interface resistance is predicted to exhibit…
We predict the phenomenon of antiferroelectric resonance (AFER), in which an ac electric field causes magnetic ions located at noncentrosymmetric positions in a multi-sublattice magnet to undergo magnetic transitions corresponding to…
The effect of an exchange field on electrical transport in thin films of metallic ferromagnetic manganites has been investigated. The exchange field was induced both by direct exchange coupling in a ferromagnet/antiferromagnet multilayer…
The magnon current holds substantial importance in facilitating the transfer of angular momentum in spin-based electronics. However, the magnon current in three-dimensional magnetic materials remains orders of magnitude too small for…
We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer…
Magnetoelectric coupling in ferromagnet/multiferroic systems is often manifested in the exchange bias effect, which may have combined contributions from multiple sources, such as domain walls, chemical defects or strain. In this study we…
More than 30 years ago, Malozemoff (Phys. Rev. B 35, 3679 (1987)) hypothesized that exchange interaction at the interface between a ferromagnet (F) and an antiferromagnet (AF) can act as an effective random field, which can profoundly…
Antiferromagnetic spintronic devices have the potential to outperform conventional ferromagnetic devices due to their ultrafast dynamics and high data density. A challenge in designing these devices is the control and detection of the…
Antiferromagnetic (AFM) materials with zero or vanishingly small macroscopic magnetization are nowadays the constituent elements of spintronic devices. However, possibility to use them as active elements that show nontrivial controllable…
We considered a planar Josephson junction which is composed of two s-wave superconducting contacts deposited on the top of a thin antiferromagnetic (AFM) disordered metal film. In such a system noticeable Josephson currents may be observed,…
The impact of in-plane alternating currents on the exchange bias, resistance, and magnetoresistance of a CoFe/NiCoO/CoFe/Cu/CoFe spin-valve is studied. With increasing current, the resistance is increased while the maximum magnetoresistance…
The spin configuration in the ferromagnetic part during the magnetization reversal plays a crucial role in the exchange bias effect. Through Monte Carlo simulation, the exchange bias effect in ferromagnetic-antiferromagnetic core-shell…
Exchange bias effect is an important attribute in several device applications. Traditionally, it is discussed as a form of exchange anisotropy at the interface between the ferromagnetic/antiferromagnetic layers of two distinct systems. We…
We present a micromagnetic approach to exchange bias (EB) in ferromagnetic (FM)/antiferromagnetic (AFM) thin film systems with a small number of irreversible interfacial magnetic moments. We express the exchange bias field $H_{EB}$ in terms…
Antiferromagnetic materials present us with rich and exciting physics, which we can exploit to open new avenues in spintronic device applications. We explore perpendicularly magnetized exchange biased systems of Pt/Co/IrMn and Pt/Co/FeMn,…