Related papers: Transport and drag in undoped electron-hole bilaye…
We report electrical transport measurements on GaAs/AlGaAs based electron-hole bilayers. These systems are expected to make a transition from a pair of weakly coupled two-dimensional systems to a strongly coupled exciton system as the…
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two…
We present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional…
We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$\approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole…
We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we…
Several recent experiments have reported an anomalous temperature dependence of the Coulomb drag effect in electron-hole bilayers. Motivated by these puzzling data, we study theoretically a low-density electron-hole bilayer, where electrons…
The layer interdependence of transport in an undoped electron-hole bilayer (uEHBL) device was studied as a function of carrier density, interlayer electric field, and temperature. The uEHBL device consisted of a density tunable,…
A low-temperature upturn of the Coulomb drag resistivity measured in an undoped electron-hole bilayer (uEHBL) device, possibly manifesting from exciton formation or condensation, was recently observed. The effects of density imbalance on…
The band-inverted electron-hole bilayers, such as InAs/GaSb, are an interesting playground for the interplay of quantum spin Hall effect and correlation effects because of the small density of electrons and holes and the relatively small…
We describe studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with large difference in transport properties between the two charge layers. From electronic…
Coulomb drag between adjacent electron and hole gases has attracted considerable attention, being studied in various two-dimensional systems, including semiconductor and graphene heterostructures. Here we report measurements of…
Coulomb drag resulting from interlayer electron-electron scattering in double layer 2D electron systems at high magnetic field has been measured. Within the lowest Landau level the observed drag resistance exceeds its zero magnetic value by…
Electronic transport in the regime where carrier-carrier collisions are the dominant scattering mechanism has taken on new relevance with the advent of ultraclean two-dimensional materials. Here we present a combined theoretical and…
Charge-neutral conducting systems represent a class of materials with unusual properties governed by electron-hole (e-h) interactions. Depending on the quasiparticles' statistics, band structure, and device geometry these semimetallic…
We propose a mechanism and develop a theory for nonreciprocal Coulomb drag resistance. This effect arises in electron double-layer systems in the presence of an in-plane magnetic field in noncentrosymmetric conductors or in bilayers with…
We explain the strong interlayer drag resistance observed at low temperatures in bilayer electron-hole systems in terms of an interplay between local electron-hole-pair condensation and disorder-induced carrier density variations. Smooth…
We investigate the electron-hole two-stream instability (or Coulomb drag) in intrinsic bilayer graphene in the hydrodynamic regime, accounting for the effects of temperature, initial drift velocity, magnetic field, and collisions. The…
Hall and diagonal resistances of bilayer fractional quantum Hall systems are discussed theoretically. The bilayers have electrodes attached separately to each layer. They are assumed to be coupled weakly by interlayer tunneling, while the…
The transresistance and the Hall transresistance of dirty two-dimensional bi-layer systems in the presence of tunneling bridges (pinholes) are studied theoretically. We find, at weak magnetic field, a non-zero Hall transresistance. In a…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…