Drag and Hall drag in a bi-layer system with pinholes
Mesoscale and Nanoscale Physics
2009-10-31 v1
Abstract
The transresistance and the Hall transresistance of dirty two-dimensional bi-layer systems in the presence of tunneling bridges (pinholes) are studied theoretically. We find, at weak magnetic field, a non-zero Hall transresistance. In a geometry where the pinholes are concentrated in the middle of the sample, a quantum process gives the dominant contribution to both the ordinary transresistance and the Hall transresistance. Arising from the interplay between Coulomb repulsion, disorder and tunneling, the quantum contribution increases in a singular way as the temperature decreases.
Cite
@article{arxiv.cond-mat/9905029,
title = {Drag and Hall drag in a bi-layer system with pinholes},
author = {Yuval Oreg and Bertrand I. Halperin},
journal= {arXiv preprint arXiv:cond-mat/9905029},
year = {2009}
}
Comments
RevTeX, 16 pages. submitted to Phys. Rev. B