Related papers: Confinement-enhanced spin relaxation for electron …
We estimate the spin relaxation rate due to spin-orbit coupling and acoustic phonon scattering in weakly-confined quantum dots with up to five interacting electrons. The Full Configuration Interaction approach is used to account for the…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…
Spin related phenomena in quantum nanostructures have attracted recently much interest due to fast growing field of spintronics. In particular complex nanostructures are important as they provide a versatile system to manipulate spin and…
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the…
Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to…
The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing…
We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of…
The spin relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field,…
The spin of a confined electron, when oriented originally in some direction, will lose memory of that orientation after some time. Physical mechanisms leading to this relaxation of spin memory typically involve either coupling of the…
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be…
We have measured the relaxation time, T1, of the spin of a single electron confined in a semiconductor quantum dot (a proposed quantum bit). In a magnetic field, applied parallel to the two-dimensional electron gas in which the quantum dot…
We calculate electron and nuclear spin relaxation rates in a quantum dot due to the combined action of Nyquist noise and electron-nuclei hyperfine or spin-orbit interactions. The relaxation rate is linear in the resistance of the gate…
We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection was achieved with quantum point contacts tuned to have spin-selective…
We have studied the physical processes responsible for the spin -flip in GaAs quantum dots. We have calculated the rates for different mechanisms which are related to spin-orbit coupling and cause a spin-flip during the inelastic relaxation…
We study the spin relaxation in an interacting two--dimensional electron gas in a strong magnetic field for the case that the electron density is close to filling just one Landau sub--level of one spin projection, i.e., for filling factor…
We consider the problem of spin relaxation in a two-dimensional electron gas (2DEG) in a perpendicular magnetic field. We assume that the spin relaxation is induced by the Rashba spin-orbit (SO) interaction, which appears due to the…
How does an initially homogeneous spin-polarization in a confined two-dimensional electron gas with Rashba spin-orbit coupling evolve in time? How does the relaxation time depend on system size? We study these questions for systems of a…
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques…
We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…
Recent experiments demonstrate that a ballistic version of spin resonance, mediated by spin-orbit interaction, can be induced in narrow channels of a high-mobility GaAs two-dimensional electron gas by matching the spin precession frequency…