Related papers: Photon correlation in GaAs self-assembled quantum …
Using resonantly excited photoluminescence along with photoluminescence excitation spectroscopies, we study the carrier excitation processes in CdTe/ZnTe and CdSe/ZnSe self-assembled quantum dots. Photoluminescence excitation spectra of…
Doping a self-assembled InGaAs/GaAs quantum dot (QD) with a single Mn atom, a magnetic acceptor impurity, provides a quantum system with discrete energy levels and original spin-dependent optical selection rules, which thus has large…
Single photon sources, which are compatible with quantum memories are an important component of quantum networks. In this article, we show optical investigations on isolated GaAs/Al$_{0.25}$Ga$_{0.75}$As quantum dots grown via droplet…
Quantum emitters promise to emit exactly one photon with high probability when pumped by a laser pulse. However, even in ideal systems, re-excitation during a laser pulse causes the consecutive emission of two photons, thus limiting the…
The magnetophotoluminescence (MPL) behavior of a GaAs/Al(0.3)Ga(0.7)As single heterojunction has been investigated to 60T. We observed negatively charged singlet and triplet exciton states that are formed at high magnetic fields beyond the…
We study spatially indirect excitons of GaAs quantum wells, confined in a 10 microns electrostatic trap. Below a critical temperature of about 1 Kelvin, we detect macroscopic spatial coherence and quantised vortices in the weak…
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth…
We introduced an elevated trap technique and exploited it for lowering the effective temperature of indirect excitons. We observed narrow photoluminescence lines which correspond to the emission of individual states of indirect excitons in…
A quantum dot strongly coupled to a photonic crystal has been recently proposed as a source of entangled photon pairs [R. Johne et al., Phys. Rev. Lett. 100, 240404 (2008)]. The biexction decay via intermediate polariton states can be used…
To generate entangled photon pairs via quantum dots (QDs), the exciton fine structure splitting (FSS) must be comparable to the exciton homogeneous line width. Yet in the (In,Ga)As/GaAs QD, the intrinsic FSS is about a few tens $\mu$eV. To…
A transition between the strong (coherent) and weak (incoherent) coupling limits of resonant interaction between quantum well (QW) excitons and bulk photons is analyzed and quantified as a function of the incoherent damping rate caused by…
We study the fluorescence light emitted from GaAs excitons in semiconductor quantum wells. The excitons are modeled as interacting bosons. By combining quantum optical methods for the excitonic emission spectrum with many particle…
Polarized cross-correlation spectroscopy on a quantum dot charged with a single hole shows the sequential emission of photons with common circular polarization. This effect is visible without magnetic field, but becomes more pronounced as…
Optical dual-pulse pumping actively creates quantum-mechanical superposition of the electronic and phononic states in a bulk solid. We here made transient reflectivity measurements in an n-GaAs using a pair of relative-phase-locked…
Sources of high-energy photons have important applications in almost all areas of research. However, the photon flux and intensity of existing sources is strongly limited for photon energies above a few hundred keV. Here we show that a…
We study the evolution of photoluminescence (PL) from homogeneous and inhomogeneous ensembles of a few coupled QDs. We discuss the relation between signals from a given QD ensemble under strong and weak excitation (full inversion and linear…
Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature…
Biexciton emission properties were studied in a single GaAs quantum well semiconductor planar microcavity by photoluminescence measurements at low temperatures. At high pump intensity a bipolariton emission appears close to the lower…
The generation of indistinguishable single photons is a fundamental requirement for future quantum technologies, particularly in quantum repeater networks and for distributed quantum computing based on entanglement distribution. However,…
We report the direct observation of quantum coupling in individual quantum dot molecules and its manipulation using static electric fields. A pronounced anti-crossing of different excitonic transitions is observed as the electric field is…