Related papers: Alkali-metal-induced Fermi level and two dimension…
We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density…
An in-depth analysis of valley physics in 2D materials like transition metal dichalcogenides requires the measurement of many material properties as a function of Fermi level position within the electronic band structure. This is normally…
The two-dimensional electron gas found at the surface of SrTiO$_3$ and related interfaces has attracted significant attention as a promising basis for oxide electronics. In order to utilize its full potential, the response of this 2DEG to…
A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with…
Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary…
Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric…
Engineering the electronic band structure of two-dimensional electron liquids (2DELs) confined at the surface or interface of transition metal oxides is key to unlocking their full potential. Here we describe a new approach to tailoring the…
Two-dimensional electron systems offer an appealing platform to explore long-lived excitations arising due to collinear carrier scattering enabled by phase-space constraints at the Fermi surface. Recently it was found that these effects can…
Magnetoconductance of a gated two-dimensional electron gas (2DEG) in the inversion layer on p-type HgCdTe crystal is investigated. At strong magnetic fields, characteristic features such as quantum Hall effect of a 2DEG with single subband…
We present longitudinal and Hall magneto-resistance measurements of a ``magnetic'' two-dimensional electron gas (2DEG) formed in modulation-doped Zn$_{1-x-y}$Cd$_{x}$Mn$_{y}$Se quantum wells. The electron spin splitting is temperature and…
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…
Hall effect based magnetic field sensors are vector sensors which are sensitive to the perpendicular component of the magnetic field. Typically, Si-based Hall sensors are used for most usages requiring low field sensitivity. For higher…
Low energy properties of the metallic state of the 2-dimensional tJ model are presented at various densities and temperatures for second neighbor hopping t', with signs that are negative or positive corresponding to hole or electron doping.…
Using low-temperature scanning tunneling spectroscopy applied to the Cs-induced two-dimensional electron system (2DES) on p-type InSb(110), we probe electron-electron interaction effects in the quantum Hall regime. The 2DES is decoupled…
Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature range. It is demonstrated that current-voltage…
We study the absorption spectrum of a two-dimensional electron gas (2DEG) in a magnetic field. We find that that at low temperatures, when the 2DEG is spin polarized, the absorption spectra, which correspond to the creation of spin up or…
Many-body interactions in transition-metal oxides give rise to a wide range of functional properties, such as high-temperature superconductivity, colossal magnetoresistance, or multiferroicity. The seminal recent discovery of a…
The 2D layer Green function scattering method is used to calculate the energy of surface states and resonances at Gamma-bar for Al(111) for both below and above the vacuum level. The surface barrier potential is represented by an empirical…
We report the generation of photo-induced electromotive force (EMF) on the surface of c-axis oriented InN epitaxial films grown on sapphire substrates. It has been found that under the illumination of above band gap light, EMFs of different…
Fermi surfaces, three-dimensional (3D) abstract interfaces that define the occupied energies of electrons in a solid, are important for characterizing and predicting the thermal, electrical, magnetic, and optical properties of crystalline…