Related papers: Anomalous Rashba spin-orbit interaction in InAs/Ga…
The interplay between Rashba, Dresselhaus and Zeeman interactions in a quantum well submitted to an external magnetic field is studied by means of an accurate analytical solution of the Hamiltonian, including electron-electron interactions…
The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity…
Spin-orbit coupling effects are studied in quantum dots in InSb, a narrow-gap material. Competition between different Rashba and Dresselhaus terms is shown to produce wholesale changes in the spectrum. The large (and negative) $g$-factor…
The coupling between Zeeman spin splitting and Rashba spin-orbit terms has been studied experimentally in a gated InGaAs/InP quantum well structure by means of simultaneous measurements of the weak antilocalization (WAL) effect and beating…
Spin-orbit interaction in semiconductor structures with broken space inversion symmetry leads to spin splitting of electron and hole states even in the absence of magnetic field. We discover that, beyond the Rashba and Dresselhaus…
This article presents an overview of results pertaining to electronic structure, transport properties, and interaction effects in ballistic quantum wires with Rashba spin splitting. Limits of weak and strong spin--orbit coupling are…
We demonstrate that the size of the electric-field-induced Rashba spin splitting in an 80 nm wide modulation-doped InGaSb quantum well can depend strongly on the spatial variation of the electric field. In a slightly asymmetric quantum well…
Low-field magnetoresistance in p-type strained quantum wells is studied. It is shown that the Rashba mechanism leads to the cubic in quasimomentum spin-orbit splitting of the hole energy spectrum and the antilocalization behavior of…
Exact wave functions and energy levels are obtained for an electron in a two-dimensional semiconductor circular quantum ring with a confining potential of finite depth in the presence of both an external magnetic field and the Rashba…
We investigate quantum dots with Rashba spin-orbit coupling in the strongly-correlated regime. We show that the presence of the Rashba interaction enhances the Wigner localization in these systems, making it achievable for higher densities…
The spin-orbit interaction and spin-relaxation mechanisms of a shallow InAs quantum well heterostructure are investigated by magnetoconductance measurements as a function of an applied top-gate voltage. The data were fit using the…
An asymmetric triangular potential well provides the simplest model for the confinement of mobile electrons at the interface between two insulating oxides, such as LaAlO_3 and SrTiO_3 (LAO/STO). These electrons have been recently shown to…
We propose a lateral spin-blockade device that uses an InGaAs/InAlAs double quantum well (DQW), where the values of the Rashba spin-orbit parameter $\alpha_{\rm R}$ are opposite in sign but equal in magnitude between the constituent quantum…
In this article we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular we consider different spatial…
The transport properties of a magnetic two dimensional electron gas consisting of a modulation doped n type HgMnTe/HgCdTe quantum well, QW, have been investigated. By analyzing the Shubnikov-de Haas oscillations and the node positions of…
We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of…
We examine effects of inversion asymmetry of a GaAs/Al0.3Ga0.7As quantum well (QW) on electron-nuclear spin coupling in the fractional quantum Hall (QH) regime. Increasing the QW potential asymmetry at a fixed Landau-level filling factor…
The effect of Rashba spin-orbit interaction and anisotropic strain on the electronic, optical and thermodynamic properties of artificial graphene-like superlattice composed of InAs-GaAs quantum dots has been considered theoretically. The…
In the absence of an external field, the Rashba spin-orbit interaction (SOI) in a two-dimensional electron gas in a semiconductor quantum well arises entirely from the screened electrostatic potential of ionized donors. We adjust the wave…
The Rashba spin-orbit coupling arising from structure inversion asymmetry couples spin and momentum degrees of freedom providing a suitable (and very intensively investigated) environment for spintronic effects and devices. Here we show…