Related papers: Percolation Model Explaining Both Unipolar Memory …
We discuss the origin of the temperature dependence of resistivity observed in highly oriented LaNiO_3 thin films (of thickness d) grown on SrTiO_3 substrate by a pulsed laser deposition technique. All the experimental data are found to…
Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported.…
NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy…
In the past decade, several neutron reflectometry methods for determining the modulus and phase of the complex reflection coefficient of an unknown multilayer thin film have been worked out among which the method of variation of…
Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers…
Two percolation transitions are observed in Ag$_x$(SnO$_2)_{1-x}$ nanogranular films with Ag volume fraction $x$ ranging from $\sim$0.2 to $\sim$0.9. In the vicinity of each percolation threshold $x_{ci}$ ($i$$=$1, 2), the variation in…
A vast class of disordered conducting-insulating compounds close to the percolation threshold is characterized by nonuniversal values of transport critical exponent t, in disagreement with the standard theory of percolation which predicts t…
We have studied the percolation behaviour of deposits for different (2+1)-dimensional models of surface layer formation. The mixed model of deposition was used, where particles were deposited selectively according to the random (RD) and…
We report on the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in cluster-assembled nanostructured gold films above the electrical percolation and in…
Here we find the increase in 1/f noise of superconducting resonators at low temperatures to be completely incompatible with the standard tunneling model (STM) of Two Level Systems (TLS), which has been used to describe low-frequency noise…
This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nickel oxide (NiO). VNi can easily be introduced into NiO thin…
We investigate THz conductivity dynamics in NdNiO$_3$ and EuNiO$_3$ thin films following a photoinduced thermal quench into the metallic state and reveal a clear contrast between first- and second-order dynamics. While in EuNiO$_3$ the…
Crossbar array architecture is an essential design element for densely connected Non-Volatile Memory(NVM) applications. To overcome intrinsic sneak current problem of crossbar arrays, each memory unit is serially attached to a selector unit…
Superconductivity realized in bilayer nickelate thin films enables direct spectroscopic and transport studies at ambient pressure. However, a persistent two-step resistive transition remains a major barrier to achieving optimal…
Nickelate materials offer diverse functionalities for energy and computing applications. Lithium nickel oxide (LiNiO$_2$) is an archetypal layered nickelate, but the electronic structure of this correlated material is not yet fully…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
We experimentally study magnetization aging in a thin-film NiO/Permalloy bilayer. Aging characteristics are nearly independent of temperature below the exchange bias blocking temperature, but rapidly vary above it. The dependence on the…
In the present work, multi-level resistive switching (RS) in W/Co:TiO2/FTO structures induced by a multi-mixed mechanism was studied. It was found that the devices could be reproducibly programmed into three nonvolatile resistance states.…
Ruthenium dioxide (RuO$_2$) thin films were synthesized by Chemical Solution Deposition (CSD) on silicon substrates using only water and acetic acid as solvents. The microstructure, phase-purity, electrical and optical properties as well as…
We have investigated the electrical conduction processes in as-grown and thermally cycled ZnO single crystal as well as as-grown ZnO polycrystalline films over the wide temperature range 20--500 K. In the case of ZnO single crystal between…